Datasheet > AM29LV640ML102EI

AM29LV640ML102EI

更新时间： 2024-09-26 03:03:35

品牌	Logo	应用领域
飞索 - SPANSION		/
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Flash Memory,

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AM29LV640ML102EI 数据手册

ADVANCE INFORMATION

Am29LV640MH/L

64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit

3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

— 4-word/8-byte page read buffer

— 16-word/32-byte write buffer

■ Single power supply operation

— 3 V for read, erase, and program operations

■ Low power consumption (typical values at 3.0 V, 5

MHz)

■ VersatileI/O control

— 30 mA typical active read current

— 50 mA typical erase/program current

— 1 µA typical standby mode current

— Device generates data output voltages and tolerates

data input voltages on the DQ inputs/outputs as

determined by the voltage on the V_IOpin; operates

from 1.65 to 3.6 V

■ Package options

— 56-pin TSOP

■ Manufactured on 0.23 µm MirrorBit process

technology

— 64-ball Fortified BGA

■ SecSi (Secured Silicon) Sector region

SOFTWARE & HARDWARE FEATURES

— 128-word/256-byte sector for permanent, secure

identification through an 8-word/16-byte random

Electronic Serial Number, accessible through a

command sequence

■ Software features

— Program Suspend & Resume: read other sectors

before programming operation is completed

— May be programmed and locked at the factory or by

— Erase Suspend & Resume: read/program other

the customer

sectors before an erase operation is completed

— Data# polling & toggle bits provide status

■ Flexible sector architecture

— Unlock Bypass Program command reduces overall

— One hundred twenty-eight 32 Kword/64-Kbyte sectors

multiple-word programming time

■ Compatibility with JEDEC standards

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

— Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent

write protection

■ Hardware features

■ Minimum 100,000 erase cycle guarantee per sector

■ 20-year data retention at 125°C

— Sector Group Protection: hardware-level method of

preventing write operations within a sector group

— Temporary Sector Unprotect: V_ID-level method of

PERFORMANCE CHARACTERISTICS

■ High performance

changing code in locked sectors

— ACC (high voltage) input accelerates programming

— 90 ns access time

time for higher throughput during system production

— 25 ns page read times

— Hardware reset input (RESET#) resets device

— 0.4 s typical sector erase time

— Ready/Busy# output (RY/BY#) indicates program or

— 5.9 µs typical write buffer word programming time:

16-word/32-byte write buffer reduces overall

erase cycle completion

programming time for multiple-word/byte updates

Publication# 26191 Rev: B Amendment/0

Issue Date: March 19, 2002

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Refer to AMD’s Website (www.amd.com) for the latest information.

12 3 4 5 6 7...11

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与AM29LV640ML102EI相关器件

型号	品牌	获取价格	描述	数据表
AM29LV640ML102PCI	SPANSION	获取价格	Flash Memory,
AM29LV640ML112	SPANSION	获取价格	64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory
AM29LV640ML112EF	SPANSION	获取价格	Flash, 4MX16, 110ns, PDSO56, MO-142EC, TSOP-56
AM29LV640ML112EI	AMD	获取价格	64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorB
AM29LV640ML112EI	SPANSION	获取价格	64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory
AM29LV640ML112EIN	SPANSION	获取价格	Flash Memory,
AM29LV640ML112FF	SPANSION	获取价格	Flash, 4MX16, 110ns, PDSO56, REVERSE, MO-142EC, TSOP-56
AM29LV640ML112FI	SPANSION	获取价格	64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory
AM29LV640ML112FI	AMD	获取价格	64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorB
AM29LV640ML112PCF	SPANSION	获取价格	Flash, 4MX16, 110ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64

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