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AM29LV640ML112EF PDF预览

AM29LV640ML112EF

更新时间: 2024-11-13 13:05:31
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
62页 1108K
描述
Flash, 4MX16, 110ns, PDSO56, MO-142EC, TSOP-56

AM29LV640ML112EF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:MO-142EC, TSOP-56
针数:56Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.23最长访问时间:110 ns
备用内存宽度:8启动块:BOTTOM/TOP
JESD-30 代码:R-PDSO-G56JESD-609代码:e3
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:56字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:14 mmBase Number Matches:1

AM29LV640ML112EF 数据手册

 浏览型号AM29LV640ML112EF的Datasheet PDF文件第2页浏览型号AM29LV640ML112EF的Datasheet PDF文件第3页浏览型号AM29LV640ML112EF的Datasheet PDF文件第4页浏览型号AM29LV640ML112EF的Datasheet PDF文件第5页浏览型号AM29LV640ML112EF的Datasheet PDF文件第6页浏览型号AM29LV640ML112EF的Datasheet PDF文件第7页 
Am29LV640MH/L  
Data Sheet  
RETIRED  
PRODUCT  
This product has been retired and is not available for designs. For new and current designs,  
S29GL064A supersedes Am29LV640M H/L and is the factory-recommended migration path. Please  
refer to the S29GL064A datasheet for specifications and ordering information. Availability of this  
document is retained for reference and historical purposes only.  
April 2005  
The following document specifies Spansion memory products that are now offered by both Advanced  
Micro Devices and Fujitsu. Although the document is marked with the name of the company that  
originally developed the specification, these products will be offered to customers of both AMD and  
Fujitsu.  
Continuity of Specifications  
There is no change to this datasheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal datasheet improvement and are noted in the  
document revision summary, where supported. Future routine revisions will occur when appro-  
priate, and changes will be noted in a revision summary.  
For More Information  
Please contact your local AMD or Fujitsu sales office for additional information about Spansion  
memory solutions.  
Publication Number 26191 Revision F Amendment +3 Issue Date December 14, 2005  

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