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AM29LV640MH101EI PDF预览

AM29LV640MH101EI

更新时间: 2024-09-25 06:37:03
品牌 Logo 应用领域
飞索 - SPANSION 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
62页 1108K
描述
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

AM29LV640MH101EI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:MO-142B, TSOP-56针数:56
Reach Compliance Code:not_compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.74
最长访问时间:100 ns备用内存宽度:8
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G56JESD-609代码:e0
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:128端子数量:56
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP56,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:4/8 words
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:14 mmBase Number Matches:1

AM29LV640MH101EI 数据手册

 浏览型号AM29LV640MH101EI的Datasheet PDF文件第2页浏览型号AM29LV640MH101EI的Datasheet PDF文件第3页浏览型号AM29LV640MH101EI的Datasheet PDF文件第4页浏览型号AM29LV640MH101EI的Datasheet PDF文件第5页浏览型号AM29LV640MH101EI的Datasheet PDF文件第6页浏览型号AM29LV640MH101EI的Datasheet PDF文件第7页 
Am29LV640MH/L  
Data Sheet  
RETIRED  
PRODUCT  
This product has been retired and is not available for designs. For new and current designs,  
S29GL064A supersedes Am29LV640M H/L and is the factory-recommended migration path. Please  
refer to the S29GL064A datasheet for specifications and ordering information. Availability of this  
document is retained for reference and historical purposes only.  
April 2005  
The following document specifies Spansion memory products that are now offered by both Advanced  
Micro Devices and Fujitsu. Although the document is marked with the name of the company that  
originally developed the specification, these products will be offered to customers of both AMD and  
Fujitsu.  
Continuity of Specifications  
There is no change to this datasheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal datasheet improvement and are noted in the  
document revision summary, where supported. Future routine revisions will occur when appro-  
priate, and changes will be noted in a revision summary.  
For More Information  
Please contact your local AMD or Fujitsu sales office for additional information about Spansion  
memory solutions.  
Publication Number 26191 Revision F Amendment +3 Issue Date December 14, 2005  

与AM29LV640MH101EI相关器件

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AM29LV640MH101FF SPANSION

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Flash, 4MX16, 100ns, PDSO56, REVERSE, MO-142B, TSOP-56
AM29LV640MH101FI SPANSION

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64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory
AM29LV640MH101FI AMD

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64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorB
AM29LV640MH101FIN SPANSION

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暂无描述
AM29LV640MH101PCF SPANSION

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Flash, 4MX16, 100ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64
AM29LV640MH101PCI AMD

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64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorB
AM29LV640MH101PCI SPANSION

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64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory
AM29LV640MH101PCIN SPANSION

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暂无描述
AM29LV640MH101R SPANSION

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64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory
AM29LV640MH101REF SPANSION

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Flash, 4MX16, 100ns, PDSO56, MO-142EC, TSOP-56