Datasheet > AM29LV160B

AM29LV160B

更新时间： 2024-11-18 23:04:23

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
46页	606K
描述
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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AM29LV160B 数据手册

PRELIMINARY

Am29LV160B

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Top or bottom boot block configurations

available

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

■ Embedded Algorithms

— Regulated voltage range: 3.0 to 3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.35 µm process technology

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Supports Common Flash Memory Interface

(CFI)

■ Minimum 1,000,000 write cycle guarantee per

■ High performance

sector

— Full voltage range: access times as fast as 90 ns

■ Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

— Regulated voltage range: access times as fast

as 80 ns

■ Ultra low power consumption (typical values at

5 MHz)

■ CFI (Common Flash Interface) compliant

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 9 mA read current

— Provides device-specific information to the

system, allowing host software to easily

reconfigure for different Flash devices

— 20 mA program/erase current

■ Compatibility with JEDEC standards

■ Flexible sector architecture

— Pinout and software compatible with single-

power supply Flash

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

thirty-one 64 Kbyte sectors (byte mode)

— Superior inadvertent write protection

— One 8 Kword, two 4 Kword, one 16 Kword, and

thirty-one 32 Kword sectors (word mode)

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

— Supports full chip erase

— Sector Protection features:

■ Ready/Busy# pin (RY/BY#)

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Provides a hardware method of detecting

program or erase cycle completion (not

available on 44-pin SO)

Sectors can be locked in-system or via

programming equipment

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

■ Hardware reset pin (RESET#)

— Reduces overall programming time when

issuing multiple program command sequences

— Hardware method to reset the device to reading

array data

Publication# 21358 Rev: F Amendment/+2

Issue Date: March 1998

12 3 4 5 6 7...46

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与AM29LV160B相关器件

型号	品牌	获取价格	描述	数据表
AM29LV160B_05	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160B-1	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB120EC	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB-120EC	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB120ECB	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB-120ECB	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB-120ED	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB-120EDB	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB120EE	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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