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AM29F200BB-70FC PDF预览

AM29F200BB-70FC

更新时间: 2024-01-20 04:22:34
品牌 Logo 应用领域
其他 - ETC 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
40页 834K
描述
x8/x16 Flash EEPROM

AM29F200BB-70FC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:LEAD FREE, MO-180AA, SOP-44针数:44
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.61
Is Samacsys:N最长访问时间:70 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YES耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G44JESD-609代码:e3
长度:28.2 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:1,2,1,3端子数量:44
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:2.8 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.06 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40切换位:YES
类型:NOR TYPE宽度:13.3 mm
Base Number Matches:1

AM29F200BB-70FC 数据手册

 浏览型号AM29F200BB-70FC的Datasheet PDF文件第2页浏览型号AM29F200BB-70FC的Datasheet PDF文件第3页浏览型号AM29F200BB-70FC的Datasheet PDF文件第4页浏览型号AM29F200BB-70FC的Datasheet PDF文件第5页浏览型号AM29F200BB-70FC的Datasheet PDF文件第6页浏览型号AM29F200BB-70FC的Datasheet PDF文件第7页 
Am29F200B  
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)  
CMOS 5.0 Volt-only, Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
5.0 V for read and write operations  
Embedded Algorithms  
— Minimizes system level power requirements  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
Manufactured on 0.32 µm process technology  
— Compatible with 0.5 µm Am29F200A device  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
High performance  
— Access times as fast as 45 ns  
Minimum 1,000,000 write/erase cycles guaranteed  
20-year data retention at 125°C  
— Reliable operation for the life of the system  
Package options  
Low power consumption  
— 20 mA typical active read current (byte mode)  
— 28 mA typical active read current for  
(word mode)  
— 44-pin SO  
— 30 mA typical program/erase current  
— 1 µA typical standby current  
— 48-pin TSOP  
— Known Good Die (KGD)  
(see publication number 21257)  
Sector erase architecture  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
three 64 Kbyte sectors (byte mode)  
Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply flash  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
three 32 Kword sectors (word mode)  
— Superior inadvertent write protection  
— Supports full chip erase  
Data# Polling and Toggle Bit  
— Sector Protection features:  
— Detects program or erase cycle completion  
Ready/Busy# output (RY/BY#)  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
— Hardware method for detection of program or  
erase cycle completion  
Sectors can be locked via programming equipment  
Erase Suspend/Erase Resume  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
— Supports reading data from a sector not  
being erased  
Top or bottom boot block configurations available  
Hardware RESET# pin  
— Resets internal state machine to the reading  
array data  
Publication# 21526 Rev: D Amendment/0  
Issue Date: November 29, 2000  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  

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