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AM29F010B-120DWI1 PDF预览

AM29F010B-120DWI1

更新时间: 2024-11-19 21:21:31
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
12页 324K
描述
Flash, 128KX8, 120ns, WAFER-30

AM29F010B-120DWI1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:WAFER包装说明:WAFER-30
针数:30Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.41Is Samacsys:N
最长访问时间:120 nsJESD-30 代码:R-XUUC-N30
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:30
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:RECTANGULAR封装形式:UNCASED CHIP
并行/串行:PARALLEL峰值回流温度(摄氏度):240
编程电压:5 V认证状态:Not Qualified
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:30
类型:NOR TYPEBase Number Matches:1

AM29F010B-120DWI1 数据手册

 浏览型号AM29F010B-120DWI1的Datasheet PDF文件第2页浏览型号AM29F010B-120DWI1的Datasheet PDF文件第3页浏览型号AM29F010B-120DWI1的Datasheet PDF文件第4页浏览型号AM29F010B-120DWI1的Datasheet PDF文件第5页浏览型号AM29F010B-120DWI1的Datasheet PDF文件第6页浏览型号AM29F010B-120DWI1的Datasheet PDF文件第7页 
Am29F010B Known Good Die  
Data Sheet (Retired Product)  
Am29F010B Known Good Die Cover Sheet  
This product has been retired and is not recommended for designs. Please contact your Spansion representative for  
alternates. Availability of this document is retained for reference and historical purposes only.  
The following document contains information on Spansion memory products.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been  
made are the result of normal data sheet improvement and are noted in the document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number 23479  
Revision A  
Amendment 3  
Issue Date March 2, 2009  

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