Datasheet > AM29DL640H90WHIN

AM29DL640H90WHIN

更新时间： 2024-01-03 12:58:50

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
54页	881K
描述
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AM29DL640H90WHIN 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.92
最长访问时间：	90 ns	备用内存宽度：	8
启动块：	BOTTOM/TOP	命令用户界面：	YES
通用闪存接口：	YES	数据轮询：	YES
JESD-30 代码：	R-PBGA-B63	JESD-609代码：	e0
内存密度：	67108864 bit	内存集成电路类型：	FLASH
内存宽度：	16	湿度敏感等级：	3
部门数/规模：	16,126	端子数量：	63
字数：	4194304 words	字数代码：	4000000
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA63,8X12,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, FINE PITCH
并行/串行：	PARALLEL	电源：	3/3.3 V
认证状态：	Not Qualified	就绪/忙碌：	YES
部门规模：	8K,64K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.045 mA
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	切换位：	YES
类型：	NOR TYPE	Base Number Matches：	1

AM29DL640H90WHIN 数据手册

浏览型号AM29DL640H90WHIN的Datasheet PDF文件第48页

浏览型号AM29DL640H90WHIN的Datasheet PDF文件第49页

浏览型号AM29DL640H90WHIN的Datasheet PDF文件第50页

浏览型号AM29DL640H90WHIN的Datasheet PDF文件第51页

浏览型号AM29DL640H90WHIN的Datasheet PDF文件第52页

浏览型号AM29DL640H90WHIN的Datasheet PDF文件第53页

REVISION SUMMARY

Revision A (November 11, 2002)

Revision A+4 (May 10, 2004)

Initial release.

Updated preliminary to datasheet status.

Added additional header information on first page of

datasheet.

Revision A+1 (August 29, 2003)

Am29DL640H

Revision A+5 (July 12, 2004)

Converted to preliminary datasheet.

Table 5, “Am29DL640H Autoselect Codes, (High

Voltage Method),” on page 14.

Distinctive Characteristics and Physical

Dimensions

Replaced “80h (factory locked),40h (customer locked),

00h (not factory/customer locked)” with “81h (factory

locked),01h (customer and factory locked)”.

Removed 48-ball fine pitch BGA and 64-ball fortified

BGA.

Added 63-ball fine pitch BGA.

Table 12, “Am29DL640H Command Definitions,” on

page 27

Ordering Information

In Secured Silicon Sector Factory Protect row, Data

column - Replaced “80/00” with “81/01”.

Changed package type from WC to WH and removed

PC package.

(Note 10) Replaced “The data is 80h for factory

locked, 40h for customer locked, and 00h for not fac-

tory/customer locked” with “The data is 81h for factory

locked, 40h for customer locked, and 01h for not fac-

tory/customer locked”.

Table 6, Am29DL640H Boot Sector/Sector Block

Addresses for Protection/Unprotection

Modified the SA140 address.

Revision A+2 (October 24, 2003)

Revision A+6 (February 9, 2005)

Table 11, Primary Vendor-Specific Extended Query

Connection Diagrams

Corrected definitions for data at address 4Fh.

Updated the 63-ball FBGA diagram.

Revision A+3 (November 26, 2003)

DC Characteristics table

Changed VOL maximum specification from 4 mA to 2

mA.

Colophon

The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-

tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-

templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the

public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,

aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for

any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to

you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor de-

vices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design mea-

sures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating

conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign

Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-

thorization by the respective government entity will be required for export of those products

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

Am29DL640H

February 9, 2005

1...51 52 5354

下载PDF

与AM29DL640H90WHIN相关器件

型号	品牌	描述	获取价格	数据表
AM29DL642G	AMD	128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo	获取价格
AM29DL642G70I	AMD	128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo	获取价格
AM29DL642G70MDI	AMD	128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo	获取价格
AM29DL642G90I	AMD	128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo	获取价格
AM29DL642G90MDI	AMD	128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo	获取价格
AM29DL800B	AMD	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me	获取价格

与AM29DL640H90WHIN相关文章

PCF8574资料解读：主要参数分析、引脚说明
2024-05-21

8
AD637数据手册解读：主要特性、引脚及其功能解读、电气参数
2024-05-21

8
ADUM1201资料手册解读：参数分析、引脚说明、应用分析
2024-05-21

11
一文带你了解压敏电阻器在直流电路中的过压保护作用
2024-05-21

6

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29DL640H90WHIN

AM29DL640H90WHIN 技术参数

AM29DL640H90WHIN 数据手册

与AM29DL640H90WHIN相关器件

与AM29DL640H90WHIN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29DL640H90WHIN

AM29DL640H90WHIN 技术参数

AM29DL640H90WHIN 数据手册

与AM29DL640H90WHIN相关器件

与AM29DL640H90WHIN相关文章

您还可以找

您在本页遇到什么问题？