Datasheet > AM29DL640G70

AM29DL640G70

更新时间： 2024-01-30 18:24:39

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
52页	1124K
描述
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory

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AM29DL640G70 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.8
最长访问时间：	70 ns	备用内存宽度：	8
启动块：	BOTTOM/TOP	命令用户界面：	YES
通用闪存接口：	YES	数据轮询：	YES
JESD-30 代码：	R-PBGA-B63	JESD-609代码：	e0
内存密度：	67108864 bit	内存集成电路类型：	FLASH
内存宽度：	16	湿度敏感等级：	3
部门数/规模：	16,126	端子数量：	63
字数：	4194304 words	字数代码：	4000000
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA63,8X12,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, FINE PITCH
并行/串行：	PARALLEL	电源：	3/3.3 V
认证状态：	Not Qualified	就绪/忙碌：	YES
部门规模：	8K,64K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.045 mA
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	切换位：	YES
类型：	NOR TYPE	Base Number Matches：	1

AM29DL640G70 数据手册

PRELIMINARY

Am29DL640G

64 Megabit (8 M x 8-Bit/4 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Ultra low power consumption (typical values)

ARCHITECTURAL ADVANTAGES

— 2 mA active read current at 1 MHz

— 10 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

■ Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in another bank.

— Zero latency between read and write operations

■ Minimum 1 million write cycles guaranteed per

sector

■ 20 year data retention at 125°C

— Reliable operation for the life of the system

■ Flexible Bank^TMarchitecture

— Read may occur in any of the three banks not being

written or erased.

— Four banks may be grouped by customer to achieve

desired bank divisions.

SOFTWARE FEATURES

■ Data Management Software (DMS)

— AMD-supplied software manages data programming,

enabling EEPROM emulation

■ Boot Sectors

— Top and bottom boot sectors in the same device

— Any combination of sectors can be erased

— Eases historical sector erase flash limitations

■ Manufactured on 0.17 µm process technology

■ Supports Common Flash Memory Interface (CFI)

■ Erase Suspend/Erase Resume

■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte

sector

— Suspends erase operations to allow reading from

other sectors in same bank

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

— Customer lockable: One-time programmable only.

Once locked, data cannot be changed

■ Zero Power Operation

HARDWARE FEATURES

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero.

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Compatible with JEDEC standards

■ Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to the read mode

— Pinout and software compatible with

single-power-supply flash standard

PACKAGE OPTIONS

■ WP#/ACC input pin

— Write protect (WP#) function protects sectors 0, 1,

140, and 141, regardless of sector protect status

■ 63-ball Fine Pitch BGA

■ 64-ball Fortified BGA

■ 48-pin TSOP

— Acceleration (ACC) function accelerates program

timing

■ Sector protection

PERFORMANCE CHARACTERISTICS

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

■ High performance

— Access time as fast as 65 ns

— Program time: 4 µs/word typical utilizing Accelerate

function

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

Publication# 25693 Rev: A Amendment/+2

Issue Date: June 7, 2002

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM29DL640G70相关器件

型号	品牌	描述	获取价格	数据表
AM29DL640G70EE	AMD	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me	获取价格
AM29DL640G70EEN	AMD	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me	获取价格
AM29DL640G70EI	AMD	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me	获取价格
AM29DL640G70EI	SPANSION	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me	获取价格
AM29DL640G70EIN	AMD	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me	获取价格
AM29DL640G70EIN	SPANSION	Flash, 4MX16, 70ns, PDSO48,	获取价格

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