GENERAL DESCRIPTION
The Am29DL162D/163D/164D devices consists of 16
megabit, 3.0 volt-only flash memory devices, organized
as 1,048,576 words of 16 bits each or 2,097,152 bytes
of 8 bits each. Word mode data appears on
DQ0–DQ15; byte mode data appears on DQ0–DQ7.
The device is designed to be programmed in-system
with the standard 3.0 volt VCC supply, and can also be
programmed in standard EPROM programmers.
other flash sector, or may permanently lock their own
code there.
DMS (Data Management Software) allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
is an advantage compared to systems where
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory de-
vices), and more. Using DMS, user-written software
does not need to interface with the Flash memory di-
rectly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD pro-
vides this software to simplify system design and
software integration efforts.
The device is available with an access time of 70, 90,
or 120 ns. The devices are offered in 48-pin TSOP and
48-ball FBGA packages. Standard control pins—chip
enable (CE#), write enable (WE#), and output enable
(OE#)—control normal read and write operations, and
avoid bus contention issues.
The device requires only a single 3.0 volt power sup-
ply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into two banks. The device can improve overall
system performance by allowing a host system to pro-
gram or erase in one bank, then immediately and
simultaneously read from the other bank, with zero la-
tency. This releases the system from waiting for the
completion of program or erase operations.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device sta-
tus bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to reading array data.
The Am29DL162D/163D/164D devices uses multiple
bank architectures to provide flexibility for different ap-
plications. Three devices are available with the
following bank sizes:
Device
DL162
DL163
DL164
Bank 1
2 Mb
Bank 2
14 Mb
12 Mb
8 Mb
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
4 Mb
8 Mb
Am29DL162D/163D/164D Features
The SecSi (Secured Silicon) Sector is an extra 64
Kbit sector capable of being permanently locked by
AMD or customers. The SecSi Sector Indicator Bit
(DQ7) is permanently set to a 1 if the part is factory
locked, and set to a 0 if customer lockable. This way,
customer lockable parts can never be used to replace
a factory locked part.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
or y. This can be achieved in-system or via
programming equipment.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number), customer code (pro-
grammed through AMD’s ExpressFlash service), or
both. Customer Lockable parts may utilize the SecSi
Sector as bonus space, reading and writing like any
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly re-
duced in both modes.
2
Am29DL162D/163D/164D
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