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AM29DL164CB120WCEN PDF预览

AM29DL164CB120WCEN

更新时间: 2024-02-05 03:01:16
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
51页 737K
描述
Flash, 2MX8, 120ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, FBGA-48

AM29DL164CB120WCEN 技术参数

生命周期:Transferred零件包装代码:BGA
包装说明:8 X 9 MM, 0.80 MM PITCH, FBGA-48针数:48
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.29
最长访问时间:120 ns其他特性:CONFIGURABLE AS 1M X 16
备用内存宽度:16启动块:BOTTOM
JESD-30 代码:R-PBGA-B48长度:9 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
类型:NOR TYPE宽度:8 mm

AM29DL164CB120WCEN 数据手册

 浏览型号AM29DL164CB120WCEN的Datasheet PDF文件第1页浏览型号AM29DL164CB120WCEN的Datasheet PDF文件第3页浏览型号AM29DL164CB120WCEN的Datasheet PDF文件第4页浏览型号AM29DL164CB120WCEN的Datasheet PDF文件第5页浏览型号AM29DL164CB120WCEN的Datasheet PDF文件第6页浏览型号AM29DL164CB120WCEN的Datasheet PDF文件第7页 
P R E L I M I N A R Y  
GENERAL DESCRIPTION  
The Am29DL16xC family consists of 16 megabit, 3.0  
volt-only flash memory devices, organized as 1,048,576  
words of 16 bits each or 2,097,152 bytes of 8 bits each.  
Word mode data appears on DQ0–DQ15; byte mode  
data appears on DQ0–DQ7. The device is designed to  
be programmed in-system with the standard 3.0 volt  
VCC supply, and can also be programmed in standard  
EPROM programmers.  
other flash sector, or may permanently lock their own  
code there.  
DMS (Data Management Software) allows systems  
to easily take advantage of the advanced architecture  
of the simultaneous read/write product line by allowing  
removal of EEPROM devices. DMS will also allow the  
system software to be simplified, as it will perform all  
functions necessary to modify data in file structures,  
as opposed to single-byte modifications. To write or  
update a particular piece of data (a phone number or  
configuration data, for example), the user only needs  
to state which piece of data is to be updated, and  
where the updated data is located in the system. This  
is an advantage compared to systems where  
user-written software must keep track of the old data  
location, status, logical to physical translation of the  
data onto the Flash memory device (or memory de-  
vices), and more. Using DMS, user-written software  
does not need to interface with the Flash memory di-  
rectly. Instead, the user's software accesses the Flash  
memory by calling one of only six functions. AMD pro-  
vides this software to simplify system design and  
software integration efforts.  
The device is available with an access time of 70, 80,  
90, or 120 ns. The devices are offered in 56-pin SSOP,  
48-pin TSOP, and 48-ball FBGA packages. Standard  
control pins—chip enable (CE#), write enable (WE#),  
and output enable (OE#)—control normal read and  
write operations, and avoid bus contention issues.  
The device requires only a single 3.0 volt power sup-  
ply for both read and write functions. Internally  
generated and regulated voltages are provided for the  
program and erase operations.  
Simultaneous Read/Write Operations with  
Zero Latency  
The Simultaneous Read/Write architecture provides  
simultaneous operation by dividing the memory  
space into two banks. The device can improve overall  
system performance by allowing a host system to pro-  
gram or erase in one bank, then immediately and  
simultaneously read from the other bank, with zero la-  
tency. This releases the system from waiting for the  
completion of program or erase operations.  
The device offers complete compatibility with the  
JEDEC single-power-supply Flash command set  
standard. Commands are written to the command  
register using standard microprocessor write timings.  
Reading data out of the device is similar to reading  
from other Flash or EPROM devices.  
The host system can detect whether a program or  
erase operation is complete by using the device sta-  
tus bits: RY/BY# pin, DQ7 (Data# Polling) and  
DQ6/DQ2 (toggle bits). After a program or erase cycle  
has been completed, the device automatically returns  
to reading array data.  
The Am29DL16xC device family uses multiple bank  
architectures to provide flexibility for different applica-  
tions. Three devices are available with the following  
bank sizes:  
Device  
DL162  
DL163  
DL164  
Bank 1  
2 Mb  
Bank 2  
14 Mb  
12 Mb  
8 Mb  
The sector erase architecture allows memory sec-  
tors to be erased and reprogrammed without affecting  
the data contents of other sectors. The device is fully  
erased when shipped from the factory.  
4 Mb  
8 Mb  
Am29DL16xC Features  
Hardware data protection measures include a low  
VCC detector that automatically inhibits write opera-  
tions during power transitions. The hardware sector  
protection feature disables both program and erase  
operations in any combination of the sectors of mem-  
or y. This can be achieved in-system or via  
programming equipment.  
The Secured Silicon (SecSi) Sector is an extra 64  
Kbit sector capable of being permanently locked by  
AMD or customers. The SecSi Sector Indicator Bit  
(DQ7) is permanently set to a 1 if the part is factory  
locked, and set to a 0 if customer lockable. This way,  
customer lockable parts can never be used to replace  
a factory locked part.  
The device offers two power-saving features. When  
addresses have been stable for a specified amount of  
time, the device enters the automatic sleep mode.  
The system can also place the device into the  
standby mode. Power consumption is greatly re-  
duced in both modes.  
Factory locked parts provide several options. The  
SecSi Sector may store a secure, random 16 byte  
ESN (Electronic Serial Number), customer code (pro-  
grammed through AMD’s ExpressFlash service), or  
both. Customer Lockable parts may utilize the SecSi  
Sector as bonus space, reading and writing like any  
2
Am29DL16xC  

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