Datasheet > AM27C010-120DI5B

AM27C010-120DI5B

更新时间： 2022-11-26 14:09:58

品牌	Logo	应用领域
超微 - AMD		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
13页	168K
描述
1 Megabit (128 K x 8-Bit) CMOS EPROM

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AM27C010-120DI5B 数据手册

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DC CHARACTERISTICS over operating range (unless otherwise specified)

Parameter

Symbol

Parameter Description

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Test Conditions

Min

Max

Unit

= –400 µA

= 2.1 mA

2.4

0.45

2.0

+ 0.5

Input LOW Voltage

–0.5

+0.8

1.0

5.0

Input Load Current

= 0 V to V

Output Leakage Current

= 0 V to V

µA

OUT

Active Current (Note 2)

C/I Devices

E Devices

CC1

CE# = V , f = 10 MHz,

= 0 mA

OUT

TTL Standby Current

CMOS Standby Current

Supply Current (Read)

CE# = V

1.0

100

µA

CC2

CC3

CE# = V ± 0.3 V

CE# = OE# = V , V = V

IL PP CC

PP1

Caution: The device must not be removed from (or inserted into) a socket when V or V is applied.

Notes:

1. V must be applied simultaneously or before V , and removed simultaneously or after V ..

2. I

is tested with OE# = V to simulate open outputs.

CC1

3. Minimum DC Input Voltage is –0.5 V. During transitions, the inputs may overshoot to –2.0 V for periods less than 20 ns.

Maximum DC Voltage on output pins is V + 0.5 V, which may overshoot to V + 2.0 V for periods less than 20 ns.

–75 –50 –55

25 50 75 100 125 150

Temperature in °C

Frequency in MHz

10205G-5

10205G-6

Figure 1. Typical Supply Current vs. Frequency

Figure 2. Typical Supply Current vs. Temperature

V_CC= 5.5 V, f = 10 MHz

V_CC= 5.5 V, T = 25°C

Am27C010

1...5 6 789 10 11...13

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