Datasheet > AM27C010-120DC5

AM27C010-120DC5

更新时间： 2022-11-27 06:31:02

品牌	Logo	应用领域
超微 - AMD		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
13页	168K
描述
1 Megabit (128 K x 8-Bit) CMOS EPROM

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数据手册

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AM27C010-120DC5 数据手册

CE# should be decoded and used as the primary de-

vice-selecting function, while OE# be made a common

connection to all devices in the array and connected to

the READ line from the system control bus. This as-

sures that all deselected memory devices are in their

low-power standby mode and that the output pins are

only active when data is desired from a particular mem-

ory device.

ing and falling edges of Chip Enable. The magnitude of

these transient current peaks is dependent on the out-

put capacitance loading of the device. At a minimum, a

0.1 µF ceramic capacitor (high frequency, low inherent

inductance) should be used on each device between

V_CCand V_SSto minimize transient effects. In addition,

to overcome the voltage drop caused by the inductive

effects of the printed circuit board traces on EPROM ar-

rays, a 4.7 µF bulk electrolytic capacitor should be used

between V_CCand V_SSfor each eight devices. The loca-

tion of the capacitor should be close to where the

power supply is connected to the array.

System Applications

During the switch between active and standby condi-

tions, transient current peaks are produced on the ris-

MODE SELECT TABLE

Mode

CE#

OE#

PGM#

Outputs

Read

OUT

Output Disable

Standby (TTL)

Standby (CMOS)

Program

High Z

± 0.3 V

Program Verify

Program Inhibit

OUT

High Z

01h

Manufacturer Code

Device Code

Autoselect

(Note 3)

0Eh

Notes:

1. V = 12.0 V ± 0.5 V.

2. X = Either V or V .

3. A1–A8 and A10–16 = V

4. See DC Programming Characteristics for V voltage during programming.

Am27C010

1...3 4 567 8 9...13

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