Datasheet > AM27C010-120DI

AM27C010-120DI

更新时间： 2024-01-01 18:28:01

品牌	Logo	应用领域
飞索 - SPANSION		可编程只读存储器电动程控只读存储器内存集成电路
页数	文件大小	规格书
12页	178K
描述
UVPROM, 128KX8, 120ns, CMOS, CDIP32, CERAMIC, DIP-32

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AM27C010-120DI 技术参数

生命周期：	Obsolete	零件包装代码：	DIP
包装说明：	DIP,	针数：	32
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.61	风险等级：	5.07
最长访问时间：	120 ns	JESD-30 代码：	R-CDIP-T32
长度：	42.1 mm	内存密度：	1048576 bit
内存集成电路类型：	UVPROM	内存宽度：	8
功能数量：	1	端子数量：	32
字数：	131072 words	字数代码：	128000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	128KX8
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	DIP
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	PARALLEL	认证状态：	Not Qualified
座面最大高度：	5.588 mm	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
宽度：	15.24 mm	Base Number Matches：	1

AM27C010-120DI 数据手册

FINAL

Am27C010

1 Megabit (128 K x 8-Bit) CMOS EPROM

DISTINCTIVE CHARACTERISTICS

■ Fast access time

■ 100% Flashrite™ programming

— Speed options as fast as 45 ns

■ Low power consumption

— Typical programming time of 16 seconds

■ Latch-up protected to 100 mA from –1 V to

+ 1 V

— 20 µA typical CMOS standby current

■ JEDEC-approved pinout

■ High noise immunity

■ Versatile features for simple interfacing

— Both CMOS and TTL input/output compatibility

— Two line control functions

■ Single +5 V power supply

■ ±10% power supply tolerance standard

■ Standard 32-pin DIP, PDIP, and PLCC packages

GENERAL DESCRIPTION

The Am27C010 is a 1 Megabit, ultraviolet erasable pro-

grammable read-only memory. It is organized as 128K

words by 8 bits per word, operates from a single +5 V

supply, has a static standby mode, and features fast

single address location programming. Products are

available in windowed ceramic DIP packages, as well

as plastic one time programmable (OTP) PDIP and

PLCC packages.

thus eliminating bus contention in a multiple bus micro-

processor system.

AMD’s CMOS process technology provides high

speed, low power, and high noise immunity. Typical

power consumption is only 100 mW in active mode,

and 100 µW in standby mode.

All signals are TTL levels, including programming sig-

nals. Bit locations may be programmed singly, in

blocks, or at random. The device supports AMD’s

Flashrite programming algorithm (100 µs pulses), re-

sulting in a typical programming time of 16 seconds.

Data can be typically accessed in less than 45 ns, al-

lowing high-performance microprocessors to operate

without any WAIT states. The device offers separate

Output Enable (OE#) and Chip Enable (CE#) controls,

BLOCK DIAGRAM

Data Outputs

DQ0–DQ7

Output Enable

Chip Enable

and

OE#

CE#

Output

Buffers

Prog Logic

PGM#

Gating

Decoder

A0–A16

Address

Inputs

1,048,576

Bit Cell

Matrix

Decoder

10205J-1

Publication# 10205 Rev: J Amendment/0

Issue Date: July 2, 1999

12 3 4 5 6 7...12

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与AM27C010-120DI相关器件

型号	品牌	描述	获取价格	数据表
AM27C010-120DI5	AMD	1 Megabit (128 K x 8-Bit) CMOS EPROM	获取价格
AM27C010-120DI5B	AMD	1 Megabit (128 K x 8-Bit) CMOS EPROM	获取价格
AM27C010-120DIB	ROCHESTER	1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns	获取价格
AM27C010-120DIB	SPANSION	UVPROM, 128KX8, 120ns, CMOS, CDIP32, CERAMIC, DIP-32	获取价格
AM27C010-120EC	ROCHESTER	1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns	获取价格
AM27C010-120EI	ROCHESTER	1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns	获取价格

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