生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, | 针数: | 16 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 最大模拟输出电压: | 0.5 V |
最小模拟输出电压: | -5 V | 转换器类型: | D/A CONVERTER |
输入位码: | BINARY | 输入格式: | PARALLEL, 8 BITS |
JESD-30 代码: | R-PDIP-T16 | 长度: | 19.304 mm |
标称负供电电压: | -15 V | 位数: | 8 |
功能数量: | 1 | 端子数量: | 16 |
最高工作温度: | 70 °C | 最低工作温度: | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
标称安定时间 (tstl): | 0.3 µs | 最大压摆率: | 22 mA |
标称供电电压: | 5 V | 表面贴装: | NO |
温度等级: | COMMERCIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AM1408N8 | AMD | 8-Bit Multiplying D/A Converter |
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|
AM-140PIN | TE | High Performance Amplifier, 29 dB Gain, 10 - 200 MHz |
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|
AM1416-003 | MICROSEMI | RF Power Bipolar Transistor, L Band, Silicon, NPN, S042 |
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|
AM1416-003E3 | MICROSEMI | RF Power Bipolar Transistor, L Band, Silicon, NPN, S042 |
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|
AM1416-100 | ETC | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 8.5A I(C) | FO-53VAR |
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|
AM1416-200 | ETC | TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 12A I(C) | FO-83VAR |
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