Datasheet > ALM-1222-TR1G

ALM-1222-TR1G

更新时间： 2024-02-02 21:25:44

品牌	Logo	应用领域
安华高科 - AVAGO		放大器射频微波功率放大器
页数	文件大小	规格书
9页	649K
描述
1800MHz - 2200MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 6 X 5 MM, 1.1 MM HEIGHT, LEAD FREE, MINIATURE, MCOB-22

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ALM-1222-TR1G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	MODULE,22LEAD,0.25
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.33.00.01	风险等级：	5.83
其他特性：	LOW NOISE	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	29.5 dB
最大输入功率 (CW)：	22 dBm	功能数量：	1
端子数量：	22	最大工作频率：	2200 MHz
最小工作频率：	1800 MHz	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	MODULE,22LEAD,0.25	电源：	5 V
射频/微波设备类型：	NARROW BAND MEDIUM POWER	子类别：	RF/Microwave Amplifiers
技术：	GAAS	Base Number Matches：	1

ALM-1222-TR1G 数据手册

[2]

Absolute Maximum Rating T =25 C

[3]

Symbol Parameter

Units

Absolute Max.

Thermal Resistance (Vdd = 5.0V,

Vctrl=2.2V)qjc = 20 C/W

Vdd

Device Voltage, RF output to ground

Control Voltage

5.5

3.0

Notes:

Vctrl

2. Operation of this device in ex-

3. cess of any of these limits may

4. cause permanent damage.

Thermal resistance measured

using Infra-Red measurement

technique.

Pin,max CW RF Input Power

(Vdd = 5.0, Idd=280mA)

dBm

[4]

Pdiss

Total Power Dissipation

Junction Temperature

Storage Temperature

150

STG

-65 to 150

Board (module belly) tempera-

ture T is 25 C.

Derate 50mW/ C for T >95 C.

[5,6]

Product Consistency Distribution Charts

Process Capability for Gain

Process Capability for NF

150

500

400

300

200

100

LSL = 29.5, Nominal = 31.0

Nominal = 0.62, USL = 1.0

120

Std dev=0.014

CPK>2

Std dev=0.35

CPK=1.45

0.5

0.55

0.6

0.65

NF (dB)

0.7

0.75

28.5 29 29.5 30 30.5 31 31.5 32 32.5 33

Gain (dB)

Figure 1. NF@ 2.0GHz; 5V, 280mA

Figure 2. Gain @ 2.0GHz; 5V, 280mA

Process Capability for OIP3

Process Capability for Vctrl

150

120

200

LSL = 39.0, Nominal = 43.7

LSL = 1.9, Nominal = 2.3, USL = 2.8

Std dev = 0.07

CPK_L = 2.0

CPK_U = 2.1

160

120

Std dev=0.93

CPK=1.6

1.8

2.2

2.4

2.6

2.8

Vctrl (V)

OIP3 (dBm)

Figure 3. OIP3@ 2.0GHz; 5V, 280mA

Figure 4. Vctrl @ 2.0GHz; 5V, 280mA

Note:

5. Distribution data sample size is 500 samples taken from 3 diﬀerent wafers and 3 diﬀerent lots. Future wafers allocated to this product may have

nominal values anywhere between the upper and lower limits.

6. Measurements are made on a production test board, which can show a variance of up to 1dB in gain and OIP3 compared to a soldered-down

demo board. Input trace losses have been de-embedded from actual measurements.

123 4 5 6 7...9

下载PDF

与ALM-1222-TR1G相关器件

型号	品牌	描述	获取价格	数据表
ALM-1222-TR2G	AVAGO	1800MHz - 2200MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 6 X 5 MM, 1.1 MM HEIGHT	获取价格
ALM-12-B	MSYSTEM	Limit Alarms (rotary switch adj.) AL-UNIT	获取价格
ALM-12-B/Q	MSYSTEM	Limit Alarms (rotary switch adj.) AL-UNIT	获取价格
ALM-12-C	MSYSTEM	Limit Alarms (rotary switch adj.) AL-UNIT	获取价格
ALM-12-C/Q	MSYSTEM	Limit Alarms (rotary switch adj.) AL-UNIT	获取价格
ALM-12-D	MSYSTEM	Limit Alarms (rotary switch adj.) AL-UNIT	获取价格