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ADUC7034 PDF预览

ADUC7034

更新时间: 2024-01-20 18:54:35
品牌 Logo 应用领域
亚德诺 - ADI 电源电路电池传感器电源管理电路
页数 文件大小 规格书
142页 848K
描述
Integrated Precision Battery Sensor for Automotive

ADUC7034 技术参数

生命周期:Active零件包装代码:QFN
包装说明:HVQCCN,针数:48
Reach Compliance Code:unknown风险等级:5.49
具有ADC:YES地址总线宽度:
位大小:32最大时钟频率:0.032768 MHz
DAC 通道:NODMA 通道:NO
外部数据总线宽度:JESD-30 代码:S-XQCC-N48
长度:7 mmI/O 线路数量:9
端子数量:48最高工作温度:115 °C
最低工作温度:-40 °CPWM 通道:NO
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
ROM可编程性:FLASH座面最大高度:1 mm
速度:20.48 MHz最大供电电压:18 V
最小供电电压:3.5 V标称供电电压:12 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
宽度:7 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER, RISC
Base Number Matches:1

ADUC7034 数据手册

 浏览型号ADUC7034的Datasheet PDF文件第5页浏览型号ADUC7034的Datasheet PDF文件第6页浏览型号ADUC7034的Datasheet PDF文件第7页浏览型号ADUC7034的Datasheet PDF文件第9页浏览型号ADUC7034的Datasheet PDF文件第10页浏览型号ADUC7034的Datasheet PDF文件第11页 
ADuC7034  
Preliminary Technical Data  
Parameter  
Test Conditions/Comments  
Measured at TA = 25°C  
Using ADCREF, measured at TA = 25°C  
Min  
Typ  
Max  
Unit  
%
%
Initial Accuracy  
Initial Accuracy1  
−5  
+5  
0.1  
Temperature Coefficient1, 22  
RESISTIVE ATTENUATOR  
Divider Ratio  
Resistor Mismatch Drift  
ADC GROUND SWITCH  
Resistance  
−300  
150  
+300  
ppm/°C  
24  
3
ppm/°C  
Direct path to ground  
20 kΩ resistor selected  
10  
20  
kΩ  
mA  
10  
30  
6
Input Current  
TEMPERATURE SENSOR25  
Accuracy  
After user calibration  
MCU in power down or standby mode  
MCU in power down or standby mode,  
temperature range = −25°C to +65°C  
3
2
°C  
°C  
POWER-ON RESET (POR)  
POR Trip Level  
POR Hysteresis  
RESET Timeout from POR  
LOW VOLTAGE FLAG (LVF)  
LVF Level  
Refers to voltage at VDD pin  
2.85  
1.9  
3.0  
300  
20  
3.15  
2.3  
V
mV  
ms  
Refers to voltage at VDD pin  
Refers to voltage at VDD pin  
32.768 kHz clock, 256 prescale  
2.1  
6.0  
V
V
POWER SUPPLY MONITOR (PSM)  
PSM Trip Level  
WATCHDOG TIMER (WDT)  
Timeout Period1  
0.008  
512  
sec  
ms  
Timeout Step Size  
FLASH/EE MEMORY1  
Endurance26  
7.8  
10,000  
20  
Cycles  
Years  
Data Retention27  
DIGITAL INPUTS  
All digital inputs except NTRST  
Input (high) = REG_DVDD  
Input (low) = 0 V  
Input Leakage Current  
Input Pull-up Current  
Input Capacitance  
Input Leakage Current  
Input Pull-down Current  
LOGIC INPUTS1  
1
-20  
10  
1
10  
-10  
µA  
µA  
pF  
µA  
µA  
-80  
30  
NTRST only: input (low) = 0 V  
NTRST only: input (high) = REG_DVDD  
All logic inputs  
10  
100  
55  
VINL, Input Low Voltage  
VINH, Input High Voltage  
CRYSTAL OSCILLATOR1  
Logic Inputs, XTAL1 Only  
VINL, Input Low Voltage  
VINH, Input High Voltage  
XTAL1 Capacitance  
XTAL2 Capacitance  
ON-CHIP OSCILLATORS  
Low Power Oscillator  
Accuracy28  
0.4  
0.8  
V
V
2.0  
V
V
pF  
pF  
1.7  
12  
12  
131.072  
131.072  
10.24  
kHz  
%
kHz  
%
Includes drift data from 1000 hour life test  
Includes drift data from 1000 hour life test  
−3  
−1  
+3  
Precision Oscillator  
Accuracy  
+1  
MCU CLOCK RATE  
8 programmable core clock selections within this 0.160  
range (binary divisions 1, 2, 4, 8 . . . 64, 128)  
20.48  
MHz  
MCU START-UP TIME  
At Power-On  
After Reset Event  
Includes kernel power-on execution time  
Includes kernel power-on execution time  
25  
5
ms  
ms  
Rev. Pr.A | Page 8 of 142  

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