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ADT7483A

更新时间: 2024-02-21 07:25:52
品牌 Logo 应用领域
亚德诺 - ADI 传感器温度传感器
页数 文件大小 规格书
24页 502K
描述
Dual Channel Temperature Sensor and Over Temperature Alarm

ADT7483A 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SSOP16,.25针数:16
Reach Compliance Code:compliantFactory Lead Time:7 weeks
风险等级:0.95Is Samacsys:N
最大精度(摄氏度):2.5 Cel其他特性:HYSTERESIS IS 0.5V
主体宽度:3.91 mm主体高度:1.75 mm
主体长度或直径:4.9 mmJESD-609代码:e3
安装特点:SURFACE MOUNT位数:8
端子数量:16最大工作电流:0.35 mA
最高工作温度:125 °C最低工作温度:-40 °C
输出接口类型:2-WIRE INTERFACE封装主体材料:PLASTIC/EPOXY
封装等效代码:SSOP16,.25封装形状/形式:RECTANGULAR
电源:3.3 V传感器/换能器类型:TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL
子类别:Other Sensors最大供电电压:3.6 V
最小供电电压:3 V表面贴装:YES
温度系数:NEGATIVE ppm/ °C端子面层:Tin (Sn)
端接类型:SOLDERBase Number Matches:1

ADT7483A 数据手册

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ADT7483A  
THEORY OF OPERATION  
The ADT7483A is a local and 2x remote temperature sensor  
and over/under temperature alarm. When the ADT7483A is  
operating normally, the on-board ADC operates in a free-  
running mode. The analog input multiplexer alternately selects  
either the on-chip temperature sensor or one of the remote  
temperature sensors to measure its local temperature. The ADC  
digitizes these signals, and the results are stored in the local,  
Remote 1, and Remote 2 temperature value registers.  
emitter voltage (VBE) of a transistor, operated at constant  
current. Unfortunately, this technique requires calibration to  
null the effect of the absolute value of VBE, which varies from  
device to device. The technique used in the ADT7483A is to  
measure the change in VBE when the device is operated at two  
different currents.  
Figure 15 shows the input signal conditioning used to measure  
the output of a remote temperature sensor. This figure shows  
the remote sensor as a substrate transistor, but it could equally  
be a discrete transistor. If a discrete transistor is used, the  
collector is not grounded and should be linked to the base. To  
prevent ground noise interfering with the measurement, the  
more negative terminal of the sensor is not referenced to ground  
but is biased above ground by an internal diode at the D− input.  
C1 can be optionally added as a noise filter (recommended  
maximum value 1,000 pF).  
The local and remote measurement results are compared with  
THERM  
the corresponding high, low, and  
temperature limits  
stored in on-chip registers. Out-of-limit comparisons generate  
flags that are stored in the status register. A result that exceeds  
the high temperature limit, the low temperature limit, or a  
ALERT  
remote diode open circuit causes the  
output to assert  
temperature limits causes the  
ALERT  
THERM  
output to assert low. The  
low. Likewise, exceeding  
THERM  
output can be  
output.  
THERM  
reprogrammed as a second  
To measure ΔVBE, the operating current through the sensor is  
switched among two related currents, I and N × I. The currents  
through the temperature diode are switched between I and N × I,  
giving ΔVBE. The temperature is then calculated using the ΔVBE  
measurement.  
The limit registers can be programmed, and the device  
controlled and configured, via the serial SMBus. The contents  
of any register can also be read back via the SMBus.  
Control and configuration functions consist of:  
The resulting ΔVBE waveforms pass through a 65 kHz low-pass  
filter to remove noise and then to a chopper-stabilized  
amplifier. This amplifies and rectifies the waveform to produce  
a dc voltage proportional to ΔVBE. The ADC digitizes this  
voltage and produces a temperature measurement. To reduce  
the effects of noise, digital filtering is performed by averaging  
the results of 16 measurement cycles for low conversion rates.  
At rates of 16, 32, and 64 conversions/second, no digital  
averaging takes place.  
Switching the device between normal operation and  
standby mode.  
Selecting the temperature measurement scale.  
ALERT  
Masking or enabling the  
Switching Pin 13 between  
output.  
ALERT THERM2  
and  
.
Selecting the conversion rate.  
TEMPERATURE MEASUREMENT METHOD  
Signal conditioning and measurement of the local temperature  
sensor is performed in the same manner.  
A simple method of measuring temperature is to exploit the  
negative temperature coefficient of a diode, measuring the base-  
V
DD  
I
BIAS  
I
N × I  
V
OUT+  
D+  
1
TO ADC  
C1  
REMOTE  
SENSING  
TRANSISTOR  
LPF  
fC = 65kHz  
D–  
V
OUT–  
BIAS  
DIODE  
1
CAPACITOR C1 IS OPTIONAL. IT IS ONLY NECESSARY IN NOISY ENVIRONMENTS. C1 = 1000pF MAX.  
Figure 15. Input Signal Conditioning  
Rev. 0 | Page 9 of 24  
 
 

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