是否无铅: | 含铅 | 生命周期: | Active |
零件包装代码: | SOIC | 包装说明: | SOP, |
针数: | 8 | Reach Compliance Code: | unknown |
风险等级: | 5.45 | Is Samacsys: | N |
其他特性: | OUTPUT VOLTAGE CAN BE ADJUSTED OVER A 0.5 PERCENT RANGE USING TRIM PIN | 模拟集成电路 - 其他类型: | THREE TERMINAL VOLTAGE REFERENCE |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
长度: | 4.9 mm | 湿度敏感等级: | 1 |
功能数量: | 1 | 输出次数: | 1 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 最大输出电压: | 5.002 V |
最小输出电压: | 4.998 V | 标称输出电压: | 5 V |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 座面最大高度: | 1.75 mm |
最大供电电压 (Vsup): | 18 V | 最小供电电压 (Vsup): | 7 V |
标称供电电压 (Vsup): | 8 V | 表面贴装: | YES |
最大电压温度系数: | 3 ppm/ °C | 温度等级: | AUTOMOTIVE |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 微调/可调输出: | YES |
宽度: | 3.9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ADR435BRZ | ADI |
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Ultralow Noise XFET Voltage References with Current Sink and Source Capability | |
ADR435BRZ-REEL7 | ADI |
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Ultralow Noise XFET Voltage References with Current Sink and Source Capability | |
ADR435TRZ-EP | ADI |
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Ultralow Noise XFET® Voltage References with Current Sink and Source Capability | |
ADR435TRZ-EP-R7 | ADI |
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Ultralow Noise XFET® Voltage References with Current Sink and Source Capability | |
ADR439 | ADI |
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Ultralow Noise XFET Voltage References with Current Sink and Source Capability | |
ADR439A | ADI |
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Ultralow Noise XFET Voltage References with Current Sink and Source Capability | |
ADR439AR | ROCHESTER |
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1-OUTPUT THREE TERM VOLTAGE REFERENCE, 4.5 V, PDSO8, MS-012AA, SOIC-8 | |
ADR439AR | ADI |
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Ultralow Noise XFET Voltage References with Current Sink and Source Capability | |
ADR439ARM | ADI |
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Ultralow Noise XFET Voltage References with Current Sink and Source Capability | |
ADR439ARM-REEL7 | ADI |
获取价格 |
Ultralow Noise XFET Voltage References with Current Sink and Source Capability |