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ADP3110KRZ1 PDF预览

ADP3110KRZ1

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
亚德诺 - ADI 驱动器
页数 文件大小 规格书
12页 242K
描述
Dual Bootstrapped, 12 V MOSFET Driver with Output Disable

ADP3110KRZ1 数据手册

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ADP3110  
THEORY OF OPERATION  
on. To complete the cycle, Q1 is switched off by pulling the gate  
down to the voltage at the SW pin. When the low-side  
MOSFET, Q2, turns on, the SW pin is pulled to ground. This  
allows the bootstrap capacitor to charge up to VCC again.  
The ADP3110 is a dual MOSFET driver optimized for driving  
two N-channel MOSFETs in a synchronous buck converter  
topology. A single PWM input signal is all that is required to  
properly drive the high-side and the low-side MOSFETs. Each  
driver is capable of driving a 3 nF load at speeds up to 500 kHz.  
The high-side drivers output is in phase with the PWM input.  
When the driver is disabled, the high-side gate is held low.  
A more detailed description of the ADP3110 and its features  
follows. Refer to Figure 1.  
OVERLAP PROTECTION CIRCUIT  
The overlap protection circuit prevents both of the main power  
switches, Q1 and Q2, from being on at the same time. This  
prevents shoot-through currents from flowing through both  
power switches, and the associated losses that can occur during  
their on/off transitions. The overlap protection circuit  
accomplishes this by adaptively controlling the delay from the  
Q1 turn off to the Q2 turn on, and by internally setting the  
delay from the Q2 turn off to the Q1 turn on.  
LOW-SIDE DRIVER  
The low-side driver is designed to drive a ground-referenced  
N-channel MOSFET. The bias to the low-side driver is  
internally connected to the VCC supply and PGND.  
When the ADP3110 is enabled, the drivers output is  
180 degrees out of phase with the PWM input. When the  
ADP3110 is disabled, the low-side gate is held low.  
HIGH-SIDE DRIVER  
To prevent the overlap of the gate drives during the Q1 turn off  
and the Q2 turn on, the overlap circuit monitors the voltage at  
the SW pin. When the PWM input signal goes low, Q1 begins  
to turn off (after propagation delay). Before Q2 can turn on, the  
overlap protection circuit makes sure that SW has first gone  
high and then waits for the voltage at the SW pin to fall from  
The high-side driver is designed to drive a floating N-channel  
MOSFET. The bias voltage for the high-side driver is developed  
by an external bootstrap supply circuit, which is connected  
between the BST and SW pins.  
The bootstrap circuit comprises a diode, D1, and bootstrap  
capacitor, CBST1. CBST2 and RBST are included to reduce the high-  
side gate drive voltage and limit the switch node slew rate  
(referred to as a Boot-Snap™ circuit, see the Application  
Information section for more details). When the ADP3110 is  
starting up the SW pin is at ground; therefore the bootstrap  
capacitor charges up to VCC through D1. When the PWM  
input goes high, the high-side driver begins to turn on the high-  
side MOSFET, Q1, by pulling charge out of CBST1 and CBST2. As  
Q1 turns on, the SW pin rises up to VIN, forcing the BST pin to  
VIN to 1 V. Once the voltage on the SW pin has fallen to 1 V, Q2  
begins turn on. If the SW pin had not gone high first, then the  
Q2 turn on is delayed by a fixed 150 ns. By waiting for the  
voltage on the SW pin to reach 1 V or for the fixed delay time,  
the overlap protection circuit ensures that Q1 is off before Q2  
turns on, regardless of variations in temperature, supply voltage,  
input pulse width, gate charge, and drive current. If SW does  
not go below 1 V after 190 ns, DRVL turns on. This can occur if  
the current flowing in the output inductor is negative and is  
flowing through the high-side MOSFET body diode.  
V
IN + VC(BST), which is enough gate-to-source voltage to hold Q1  
Rev. 0 | Page 7 of 12  
 

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