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ADP1111ARZ-3.3 PDF预览

ADP1111ARZ-3.3

更新时间: 2024-02-11 17:57:00
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 开关光电二极管
页数 文件大小 规格书
16页 1044K
描述
1.5 A SWITCHING REGULATOR, 88 kHz SWITCHING FREQ-MAX, PDSO8, SOIC-8

ADP1111ARZ-3.3 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:2.09
模拟集成电路 - 其他类型:SWITCHING REGULATOR控制模式:VOLTAGE-MODE
控制技术:PULSE FREQUENCY MODULATION最大输入电压:30 V
最小输入电压:2 V标称输入电压:3 V
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.75 mm子类别:Switching Regulator or Controllers
表面贴装:YES切换器配置:BUCK-BOOST
最大切换频率:88 kHz技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mmBase Number Matches:1

ADP1111ARZ-3.3 数据手册

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ADP1111  
For most circuits, the 1N5818 is a suitable companion to the  
ADP1111. This diode has a VF of 0.5 V at 1 A, 4 μA to 10 μA  
leakage, and fast turn-on and turn-off times. A surface mount  
version, the MBRS130T3, is also available.  
For switch currents of 100 mA or less, a Shottky diode such as  
the BAT85 provides a VF of 0.8 V at 100 mA and leakage less  
than 1 μA. A similar device, the BAT54, is available in a SOT23  
package. Even lower leakage, in the 1 nA to 5 nA range, can be  
obtained with a 1N4148 signal diode.  
General purpose rectifiers, such as the 1N4001, are not suitable  
for ADP1111 circuits. These devices, which have turn-on times  
of 10 μs or more, are far too slow for switching power supply  
applications. Using such a diode “just to get started” will result  
in wasted time and effort. Even if an ADP1111 circuit appears  
to function with a 1N4001, the resulting performance will not  
be indicative of the circuit performance when the correct diode  
is used.  
Figure 15. Aluminum Electrolytic  
Figure 16. Tantalum Electrolytic  
Figure 17. OS-CON Capacitor  
CIRCUIT OPERATION, STEP-UP (BOOST) MODE  
In boost mode, the ADP1111 produces an output voltage that is  
higher than the input voltage. For example, +12 V can be gener-  
ated from a +5 V logic power supply or +5 V can be derived  
from two alkaline cells (+3 V).  
Figure 18 shows an ADP1111 configured for step-up operation.  
The collector of the internal power switch is connected to the  
output side of the inductor, while the emitter is connected to  
GND. When the switch turns on, pin SW1 is pulled near  
ground. This action forces a voltage across L1 equal to  
V
IN – VCE(SAT), and current begins to flow through L1. This  
current reaches a final value (ignoring second-order effects) of:  
V
IN  
V  
IPEAK  
CE (SAT) 7μs  
L
where 7 μs is the ADP1111 switch’s “on” time.  
D1  
1N5818  
L1  
V
V
IN  
OUT  
R3  
(OPTIONAL)  
2
1
R2  
R1  
I
V
IN  
LIM  
3
8
SW1  
FB  
+
ADP1111  
C1  
GND SW2  
5
4
If low output ripple is important, the user should consider the  
ADP3000. Because this device switches at 400 kHz, lower peak  
current can be used. Also, the higher switching frequency  
simplifies the design of the output filter. Consult the ADP3000  
data sheet for additional details.  
Figure 18. Step-Up Mode Operation  
When the switch turns off, the magnetic field collapses. The  
polarity across the inductor changes, current begins to flow  
through D1 into the load, and the output voltage is driven above  
the input voltage.  
DIODE SELECTION  
The output voltage is fed back to the ADP1111 via resistors R1  
and R2. When the voltage at pin FB falls below 1.25 V, SW1  
turns “on” again, and the cycle repeats. The output voltage is  
therefore set by the formula:  
In specifying a diode, consideration must be given to speed,  
forward voltage drop and reverse leakage current. When the  
ADP1111 switch turns off, the diode must turn on rapidly if  
high efficiency is to be maintained. Shottky rectifiers, as well as  
fast signal diodes such as the 1N4148, are appropriate. The  
forward voltage of the diode represents power that is not  
delivered to the load, so VF must also be minimized. Again,  
Schottky diodes are recommended. Leakage current is especially  
important in low-current applications where the leakage can be  
a significant percentage of the total quiescent current.  
R2⎞  
VOUT = 1. 25 V 1+  
R1  
The circuit of Figure 18 shows a direct current path from VIN to  
OUT, via the inductor and D1. Therefore, the boost converter  
is not protected if the output is short circuited to ground.  
V
REV.  
A
–9–  

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