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ADN2816ACPZ PDF预览

ADN2816ACPZ

更新时间: 2024-01-24 04:38:52
品牌 Logo 应用领域
亚德诺 - ADI ATM集成电路SONET集成电路SDH集成电路电信集成电路电信电路异步传输模式PC时钟
页数 文件大小 规格书
24页 395K
描述
Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC

ADN2816ACPZ 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:QFN
包装说明:HVQCCN, LCC32,.2SQ,20针数:32
Reach Compliance Code:compliantECCN代码:5A991.B.3
HTS代码:8542.39.00.01风险等级:7.95
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/165933.1.2.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=165933
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=1659333D View:https://componentsearchengine.com/viewer/3D.php?partID=165933
Samacsys PartID:165933Samacsys Image:https://componentsearchengine.com/Images/9/ADN2816ACPZ.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/ADN2816ACPZ.jpgSamacsys Pin Count:33
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Quad Flat No-Lead
Samacsys Footprint Name:CP-32-7 (LFCSP)Samacsys Released Date:2015-04-13 16:41:06
Is Samacsys:N应用程序:SONET;SDH
JESD-30 代码:S-XQCC-N32JESD-609代码:e3
长度:5 mm湿度敏感等级:3
功能数量:1端子数量:32
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装等效代码:LCC32,.2SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1 mm子类别:ATM/SONET/SDH ICs
最大压摆率:0.122 mA标称供电电压:3.3 V
表面贴装:YES电信集成电路类型:ATM/SONET/SDH CLOCK RECOVERY CIRCUIT
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
宽度:5 mmBase Number Matches:1

ADN2816ACPZ 数据手册

 浏览型号ADN2816ACPZ的Datasheet PDF文件第16页浏览型号ADN2816ACPZ的Datasheet PDF文件第17页浏览型号ADN2816ACPZ的Datasheet PDF文件第18页浏览型号ADN2816ACPZ的Datasheet PDF文件第20页浏览型号ADN2816ACPZ的Datasheet PDF文件第21页浏览型号ADN2816ACPZ的Datasheet PDF文件第22页 
Data Sheet  
ADN2816  
APPLICATIONS INFORMATION  
PCB DESIGN GUIDELINES  
Proper RF PCB design techniques must be used for optimal  
performance.  
If connections to the supply and ground are made through vias,  
the use of multiple vias in parallel helps to reduce series  
inductance, especially on Pin 24, which supplies power to the  
high speed CLKOUTP/CLKOUTN and DATAOUTP/  
DATAOUTN output buffers. Refer to Figure 19 for the  
recommended connections.  
Power Supply Connections and Ground Planes  
Use of one low impedance ground plane is recommended. The  
VEE pins should be soldered directly to the ground plane to  
reduce series inductance. If the ground plane is an internal  
plane and connections to the ground plane are made through  
vias, multiple vias can be used in parallel to reduce the series  
inductance, especially on Pin 23, which is the ground return for  
the output buffers. The exposed pad should be connected to the  
GND plane using plugged vias so that solder does not leak  
through the vias during reflow.  
By using adjacent power supply and GND planes, excellent high  
frequency decoupling can be realized by using close spacing  
between the planes. This capacitance is given by  
CPLANE 0.88εr A/d  
pF  
where:  
Use of a 22 μF electrolytic capacitor between VCC and VEE is  
recommended at the location where the 3.3 V supply enters the  
PCB. When using 0.1 μF and 1 nF ceramic chip capacitors, they  
should be placed between the IC power supply VCC and VEE,  
as close as possible to the ADN2816 VCC pins.  
r is the dielectric constant of the PCB material.  
A is the area of the overlap of power and GND planes (cm2).  
d is the separation between planes (mm).  
For FR-4, r = 4.4 mm and 0.25 mm spacing, C ~15 pF/cm2.  
50TRANSMISSION LINES  
VCC  
+
DATAOUTP  
DATAOUTN  
CLKOUTP  
CLKOUTN  
22µF  
0.1µF  
1nF  
VCC  
1nF  
0.1µF  
VCC  
VCC  
VEE  
NC  
SDA  
SCK  
1
2
3
4
5
6
7
8
24  
23  
22  
21  
20  
19  
18  
17  
VCC  
VREF  
NIN  
PIN  
NC  
EXPOSED PAD  
TIED OFF TO  
VEE PLANE  
WITH VIAS  
2
I C CONTROLLER  
0.1µF  
1nF  
0.1µF  
2
I C CONTROLLER  
SADDR5  
VCC  
NC  
VEE  
VCC  
VEE  
1nF  
0.1µF  
50Ω  
50Ω  
OPTICAL  
TRANSCEIVER  
MODULE  
µC  
0.47µF ±20%  
>300MINSULATION RESISTANCE  
VCC  
0.1µF  
1nF  
Figure 19. Typical ADN2816 Applications Circuit  
Rev. C | Page 19 of 24  
 
 
 

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