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ADD8708WCPZ-REEL7 PDF预览

ADD8708WCPZ-REEL7

更新时间: 2024-01-04 18:52:37
品牌 Logo 应用领域
亚德诺 - ADI 调节器缓冲放大器放大器电路
页数 文件大小 规格书
16页 743K
描述
18-Channel Gamma Buffer with Regulator

ADD8708WCPZ-REEL7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFN
包装说明:HVQCCN,针数:48
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.84
Is Samacsys:N放大器类型:BUFFER
最大平均偏置电流 (IIB):1.5 µA标称带宽 (3dB):4.5 MHz
最大输入失调电压:15000 µVJESD-30 代码:R-XQCC-N48
JESD-609代码:e3长度:7 mm
湿度敏感等级:3功能数量:18
端子数量:48最高工作温度:105 °C
最低工作温度:-40 °C最小输出电流:0.15 A
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:RECTANGULAR封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1 mm标称压摆率:6 V/us
供电电压上限:18 V标称供电电压 (Vsup):16 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:7 mm
Base Number Matches:1

ADD8708WCPZ-REEL7 数据手册

 浏览型号ADD8708WCPZ-REEL7的Datasheet PDF文件第9页浏览型号ADD8708WCPZ-REEL7的Datasheet PDF文件第10页浏览型号ADD8708WCPZ-REEL7的Datasheet PDF文件第11页浏览型号ADD8708WCPZ-REEL7的Datasheet PDF文件第13页浏览型号ADD8708WCPZ-REEL7的Datasheet PDF文件第14页浏览型号ADD8708WCPZ-REEL7的Datasheet PDF文件第15页 
ADD8708  
OPERATING TEMPERATURE RANGE  
The junction temperature is as follows:  
TJ = TAMB + θJA × PDIS  
VDD × IDQ = 16 V × 15 mA = 0.240 W  
(VDD VREG OUT) × ILOAD = (16 V – 14.4 V) × 5 mA = 0.008 W  
P
DIS = 0.240 W + 0.731 W + 0.008 W =0.979 W  
where:  
T
θ
P
AMB = ambient temperature.  
JA = junction-to-ambient thermal resistance, in °C/watt.  
DIS = power dissipated in the device, in watts.  
Example 1  
Exposed pad soldered down with via θJA = 28.3°C/W:  
TJ = 95°C + (28.3°C/W) × (0.979 W) = 122.7°C  
For the ADD8708, PDIS can be calculated by this equation:  
where 150°C is the maximum junction temperature that is  
guaranteed before the part breaks down. The maximum process  
limit is 125°C. Because TJ is < 150°C and < 125°C, this example  
demonstrates a condition where the part should perform within  
process limits.  
P
DIS = VDD × IDQ + Σ(IOUT X(+) × (VDD VOUT X)) +  
Σ(−IOUT X(−) × VOUT X) + (VDD VREG OUT ) × ILOAD  
where:  
DD × IDQ = nominal system power requirements.  
OUT X(+) × (VDD VOUT X)= positive-current amplifier load  
V
I
Example 2  
power dissipation (current comes from VDD).  
−IOUT X(−) × VOUT X = negative-current amplifier load power  
dissipation (current goes to GND).  
Exposed pad not soldered down θJA = 47.7°C/W:  
TJ = 95°C + (47.7°C/W) × (0.979 W) = 141.7°C  
(VDD VREG OUT) × ILOAD = regulator load power dissipation.  
In this example, TJ is < 150°C but > 125°C. Although the part  
should not exhibit any damage in this situation, the process  
limits have been exceeded. The part may no longer operate  
as intended.  
In this example, TAMB = 95°C. To calculate PDIS, assume the  
values in Table 6.  
Table 6.  
These examples show that soldering down the exposed pad is  
important for proper heat dissipation. Under the same power-  
up and loading conditions, the unsoldered part has a higher  
temperature than the soldered part. Therefore, it is strongly  
advised that the exposed pad be soldered to VDD to maintain  
part integrity.  
VOUT X (V)  
14.400  
11.405  
10.627  
10.397  
10.195  
10.080  
9.821  
IOUT X (mA)  
4.3  
5.2  
P (W)  
VOUT18  
VOUT17  
VOUT16  
VOUT15  
VOUT14  
VOUT13  
VOUT12  
VOUT11  
VOUT10  
0.00688  
0.0239  
0.0468  
0.0409  
0.0441  
0.0393  
0.0513  
0.0543  
0.0389  
0.0272  
0.0556  
0.0168  
0.0332  
0.0644  
0.0405  
0.113  
4.4  
7.3  
7.6  
3.9  
8.3  
7.9  
9.130  
8.611  
4.5  
4.2  
5.6  
VOUT  
VOUT  
VOUT  
VOUT  
VOUT  
VOUT  
VOUT  
VOUT  
VOUT  
9
8
7
6
5
4
3
2
1
6.480  
6.077  
5.098  
3.3  
6.9  
5.7  
3.5  
9.6  
4.810  
4.694  
4.435  
4.205  
3.398  
0.0323  
0.00145  
0.731  
9.5  
7.2  
0.202  
Σ(IOUT X(+) × (VDD VOUT X)) + Σ(IOUT X() × VOUT X  
)
Rev. 0 | Page 12 of 16  
 
 

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