Datasheet > ADA4304-4ACPZ-RL

ADA4304-4ACPZ-RL

更新时间： 2022-02-26 11:45:11

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亚德诺 - ADI		/
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11页	217K
描述
1:3 and 1:4 Single-Ended, Low Cost Active RF Splitters

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ADA4304-4ACPZ-RL 数据手册

ADA4304-3/ADA4304-4

Data Sheet

ABSOLUTE MAXIMUM RATINGS

The power dissipated in the package (P_D) is essentially equal to

Table 2.

the quiescent power dissipation, that is, the supply voltage (V_S)

times the quiescent current (I_S). In Table 1, the maximum

power dissipation of the ADA4304-3/ADA4304-4 can be

calculated as

Parameter

Rating

Supply Voltage

5.5 V

Power Dissipation

See Figure 3

−65°C to +125°C

−40°C to +85°C

300°C

Storage Temperature Range

Operating Temperature Range

Lead Temperature (Soldering, 10 sec)

Junction Temperature

_{D (MAX)}= 5.25 V × 105 mA = 551 mW

Airflow increases heat dissipation, effectively reducing θ_JA.

In addition, more metal directly in contact with the package

leads/exposed pad from metal traces, through-holes, ground,

and power planes reduces the θ_JA.

150°C

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This

is a stress rating only; functional operation of the product

at these or any other conditions above those indicated in

the operational section of this specification is not implied.

Operation beyond the maximum operating conditions for

extended periods may affect product reliability.

Figure 3 shows the maximum safe power dissipation in the

package vs. the ambient temperature for the 16-lead LFCSP

(98°C/W) on a JEDEC standard 4-layer board.

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

THERMAL RESISTANCE

θ_JAis specified for the device (including exposed pad)

soldered to a high thermal conductivity 4-layer (2s2p)

circuit board, as described in EIA/JESD 51-7.

Table 3. Thermal Resistance

Package Type

θ_JA

Unit

16-Lead LFCSP (Exposed Pad)

°C/W

Maximum Power Dissipation

100

The maximum safe power dissipation in the ADA4304-3/

ADA4304-4 package is limited by the associated rise in

junction temperature (T_J) on the die. At approximately

150°C, which is the glass transition temperature, the plastic

changes its properties. Even temporarily exceeding this

temperature limit can change the stresses that the package

exerts on the die, permanently shifting the parametric

performance. Exceeding a junction temperature of 150°C

for an extended period can result in changes in the silicon

devices, potentially causing failure.

AMBIENT TEMPERATURE (°C)

Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board

ESD CAUTION

Rev. A | Page 4 of 11

1 2 345 6 7...11

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