ADA-4743 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Symbol
Parameter
Units
Maximum
Id
Device Current
mA
90
2. Ground lead temperature is 25°C.
Derate 6.1 mW/°C for TL >89°C .
3. Junction-to-case thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Pdiss
Pin max.
Tj
Total Power Dissipation[2]
RF Input Power
mW
dBm
°C
370
20
Channel Temperature
Storage Temperature
Thermal Resistance[3]
150
TSTG
θjc
°C
-65 to 150
163
°C/W
ADA-4743 Electrical Specifications
TA = 25°C, Zo=50Ω, Pin = -25 dBm, Id = 60 mA (unless specified otherwise)
Symbol
Parameter and Test Condition:
Frequency
Units
Min.
Typ.
Max.
Std. Dev.
Id = 60 mA, Zo = 50Ω
Vd
Device Voltage Id=60 mA
Power Gain (|S21|2
V
3.3
15
3.8
4.3
18
Gp
100 MHz
dB
16.6
16.5
900 MHz[1,2]
∆Gp
Gain Flatness
100 to 900 MHz
0.1 to 2 GHz
dB
0.5
1.5
F3dB
3 dB Bandwidth
GHz
4
VSMRin
VSMRout
NF
Input Voltage Standing Wave Ratio
Output Voltage Standing Wave Ratio
50Ω Noise Figure
0.1 to 6 GHz
0.1 to 6 GHz
1.7:1
1.5:1
100 MHz
900 MHz[1,2]
dB
4.1
4.2
0.11
0.16
P1dB
OIP3
Output Power at 1dB Gain Compression
Output 3rd Order Intercept Point
100 MHz
dBm
dBm
mV/°C
17.7
17.1
900 MHz[1,2]
100 MHz[3]
33.4
32.6
900 MHz[1,2,3]
DV/dT
Device Voltage Temperature Coefficient
-4.9
Notes:
1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below.
3. I) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone.
II) 100 MHz OIP3 test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone.
50 Ohm
Transmission
(0.5 dB loss)
50 Ohm
Input
Output
Transmission
including Bias
(0.5 dB loss)
DUT
Block diagram of 900 MHz production test board used for Vd, Gain, P1dB, OIP3, and NF measurements.
Circuit losses have been de-embedded from actual measurements.
2