Datasheet > 射频和微波 > 射频/微波放大器> ADA-4743-TR2G

ADA-4743-TR2G

更新时间： 2024-12-01 03:17:47

品牌	Logo	应用领域
安捷伦 - AGILENT		射频和微波射频放大器微波放大器
页数	文件大小	规格书
9页	108K
描述
Silicon Bipolar Darlington Amplifier

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中文翻译

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技术参数
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ADA-4743-TR2G 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SOT-343R	Reach Compliance Code：	unknown
风险等级：	5.1	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	15 dB
最大输入功率 (CW)：	20 dBm	JESD-609代码：	e3
功能数量：	1	最大工作频率：	2500 MHz
最小工作频率：		封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SOT-343R	电源：	3.8 V
射频/微波设备类型：	WIDE BAND LOW POWER	子类别：	RF/Microwave Amplifiers
技术：	BIPOLAR	端子面层：	Tin (Sn)
最大电压驻波比：	1.5	Base Number Matches：	1

ADA-4743-TR2G 数据手册

Agilent ADA-4743

Silicon Bipolar Darlington Amplifier

Data Sheet

Features

• Small Signal gain amplifier

• Operating frequency DC – 2.5 GHz

• Unconditionally stable

Surface Mount Package

Description

• 50 Ohms input & output

Agilent Technologies’ ADA-4743

is an economical, easy-to-use,

general purpose silicon bipolar

RFIC gain block amplifiers

housed in a 4-lead SC-70

(SOT-343) surface mount plastic

package which requires only half

the board space of a SOT-143

package.

SOT-343

• Flat, Broadband Frequency

Response up to 1 GHz

• Operating Current: 40 to 80 mA

• Industry standard SOT-343 package

• Lead-free option available

Specifications

900 MHz, 3.8V, 60 mA (typ.)

Pin Connections and

Package Marking

The Darlington feedback struc-

ture provides inherent broad

bandwidth performance, result-

ing in useful operating frequency

up to 2.5 GHz. This is an ideal

device for small-signal gain

• 16.5 dB associated gain

RFout

& Vd

• 17.1 dBm P_1dB

GND

• 32.6 dBm OIP₃

• 4.2 dB noise figure

GND

RFin

• VSWR < 2 throughput operating

cascades or IF amplification.

frequency

Note:

Top View. Package marking provides orientation

and identification.

• Single supply, typical I_d= 60 mA

ADA-4743 is fabricated using

Agilent’s HP25 silicon bipolar

process, which employs a double-

diffused single polysilicon

“3T” = Device Code

“x” = Date code character

identifies month of manufacture.

Applications

• Cellular/PCS/WLL base stations

process with self-aligned

• Wireless data/WLAN

• Fiber-optic systems

• ISM

submicron emitter geometry. The

process is capable of simulta-

neous high f_Tand high NPN

breakdown (25 GHz f_Tat 6V

BVCEO). The process utilizes

industry standard device oxide

isolation technologies and

submicron aluminum multilayer

interconnect to achieve superior

performance, high uniformity,

and proven reliability.

Typical Biasing Configuration

V_CC

bypass

= 5 V

- V

Attention:

RFC

Observe precautions for

handling electrostatic

sensitive devices.

block

input

3Tx

output

= 3.8 V

block

ESD Machine Model (Class A)

ESD Human Body Model (Class 1B)

Refer to Agilent Application Note A004R:

Electrostatic Discharge Damage and Control.

12 3 4 5 6 7...9

中文翻译

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