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AD8601WDRTZ-REEL PDF预览

AD8601WDRTZ-REEL

更新时间: 2024-02-18 05:07:00
品牌 Logo 应用领域
亚德诺 - ADI 运算放大器放大器电路光电二极管PC
页数 文件大小 规格书
24页 356K
描述
Precision CMOS, Single-Supply, Rail-to-Rail, Input/Output Wideband Operational Amplifiers

AD8601WDRTZ-REEL 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:ROHS COMPLIANT, MO-178AA, SOT-23, 5 PIN针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.31.00.01风险等级:5.25
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:578758Samacsys Pin Count:5
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (5-Pin)
Samacsys Footprint Name:RJ-5 (SOT23)_2Samacsys Released Date:2017-01-11 11:21:59
Is Samacsys:N放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.001 µA
25C 时的最大偏置电流 (IIB):0.0002 µA最小共模抑制比:52 dB
标称共模抑制比:65 dB频率补偿:YES
最大输入失调电压:7000 µVJESD-30 代码:R-PDSO-G5
JESD-609代码:e3长度:2.9 mm
低-偏置:YES低-失调:NO
微功率:NO湿度敏感等级:1
功能数量:1端子数量:5
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP5/6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260功率:NO
电源:3/5 V可编程功率:NO
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.45 mm标称压摆率:5.2 V/us
子类别:Operational Amplifier最大压摆率:1.5 mA
供电电压上限:6 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
标称均一增益带宽:8200 kHz最小电压增益:20000
宽带:NO宽度:1.6 mm
Base Number Matches:1

AD8601WDRTZ-REEL 数据手册

 浏览型号AD8601WDRTZ-REEL的Datasheet PDF文件第1页浏览型号AD8601WDRTZ-REEL的Datasheet PDF文件第2页浏览型号AD8601WDRTZ-REEL的Datasheet PDF文件第3页浏览型号AD8601WDRTZ-REEL的Datasheet PDF文件第5页浏览型号AD8601WDRTZ-REEL的Datasheet PDF文件第6页浏览型号AD8601WDRTZ-REEL的Datasheet PDF文件第7页 
AD8601/AD8602/AD8604  
VS = 5.0 V, VCM = VS/2, TA = 25°C, unless otherwise noted.  
Table 2.  
A Grade  
Typ  
D Grade  
Typ  
Parameter  
Symbol  
VOS  
Conditions  
Min  
Max  
Min  
Max  
Unit  
INPUT CHARACTERISTICS  
Offset Voltage (AD8601/AD8602)  
0 V ≤ VCM ≤ 5 V  
−40°C ≤ TA ≤ +125°C  
VCM = 0 V to 5 V  
80  
80  
0.2  
500  
1300  
600  
1700  
60  
100  
1000  
30  
1300  
1300  
0.2  
6000  
7000  
6000  
7000  
200  
200  
1000  
100  
100  
500  
5
μV  
μV  
μV  
μV  
pA  
pA  
pA  
pA  
pA  
pA  
V
Offset Voltage (AD8604)  
Input Bias Current  
VOS  
−40°C ≤ TA ≤ +125°C  
IB  
−40°C ≤ TA ≤ +85°C  
−40°C ≤ TA ≤ +125°C  
Input Offset Current  
IOS  
0.1  
6
25  
0.1  
6
25  
−40°C ≤ TA ≤ +85°C  
−40°C ≤ TA ≤ +125°C  
50  
500  
5
Input Voltage Range  
0
0
Common-Mode Rejection Ratio  
Large Signal Voltage Gain  
CMRR  
AVO  
VCM = 0 V to 5 V  
VO = 0.5 V to 4.5 V,  
RL = 2 kΩ, VCM = 0 V  
74  
30  
89  
80  
56  
20  
67  
60  
dB  
V/mV  
Offset Voltage Drift  
OUTPUT CHARACTERISTICS  
Output Voltage High  
ΔVOS/ΔT  
VOH  
2
2
μV/°C  
IL = 1.0 mA  
4.925 4.975  
4.925 4.975  
V
IL = 10 mA  
−40°C ≤ TA ≤ +125°C  
IL = 1.0 mA  
IL = 10 mA  
−40°C ≤ TA ≤ +125°C  
4.7  
4.6  
4.77  
4.7  
4.6  
4.77  
V
V
Output Voltage Low  
VOL  
15  
125  
30  
175  
250  
15  
125  
30  
175  
250  
mV  
mV  
mV  
mA  
Ω
Output Current  
IOUT  
50  
10  
50  
10  
Closed-Loop Output Impedance  
POWER SUPPLY  
ZOUT  
f = 1 MHz, AV = 1  
Power Supply Rejection Ratio  
Supply Current/Amplifier  
PSRR  
ISY  
VS = 2.7 V to 5.5 V  
VO = 0 V  
−40°C ≤ TA ≤ +125°C  
67  
80  
750  
56  
72  
750  
dB  
μA  
μA  
1200  
1500  
1200  
1500  
DYNAMIC PERFORMANCE  
Slew Rate  
Settling Time  
Full Power Bandwidth  
Gain Bandwidth Product  
Phase Margin  
SR  
tS  
BWp  
GBP  
Φo  
RL = 2 kΩ  
To 0.01%  
<1% distortion  
6
6
V/μs  
μs  
kHz  
MHz  
Degrees  
<1.0  
360  
8.4  
55  
<1.0  
360  
8.4  
55  
NOISE PERFORMANCE  
Voltage Noise Density  
en  
in  
f = 1 kHz  
f = 10 kHz  
f = 1 kHz  
33  
18  
0.05  
33  
18  
0.05  
nV/√Hz  
nV/√Hz  
pA/√Hz  
Current Noise Density  
Rev. G | Page 4 of 24  

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