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AD8512ARMZ

更新时间： 2024-01-30 09:47:15
品牌 Logo 应用领域
亚德诺 - ADI 运算放大器放大器电路光电二极管PC
页数 文件大小 规格书
20页 435K
描述
Precision, Very Low Noise, Low Input Bias Current

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中文翻译

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AD8512ARMZ 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.31.00.01风险等级：0.89
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.01 µA25C 时的最大偏置电流 (IIB)：0.00008 µA
标称共模抑制比：100 dB频率补偿：YES
最大输入失调电压：800 µVJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
低-偏置：YES低-失调：YES
微功率：NO湿度敏感等级：1
负供电电压上限：-18 V标称负供电电压 (Vsup)：-5 V
功能数量：2端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
功率：NO电源：+-5/+-15 V
可编程功率：NO认证状态：Not Qualified
座面最大高度：1.75 mm标称压摆率：20 V/us
子类别：Operational Amplifier最大压摆率：5 mA
供电电压上限：18 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：JFET
温度等级：AUTOMOTIVE端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
标称均一增益带宽：8000 kHz宽带：NO
宽度：3.9 mmBase Number Matches：1

AD8512ARMZ 数据手册

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AD8510/AD8512/AD8513  
A typical value for Rd is 1000 MΩ. Because Rd >> R2, the  
circuit behavior is not impacted by the effect of the junction  
resistance. The maximum signal bandwidth is  
I-V CONVERSION APPLICATIONS  
Photodiode Circuits  
Common applications for I-V conversion include photodiode  
circuits where the amplifier is used to convert a current emitted  
by a diode placed at the positive input terminal into an output  
voltage.  
ft  
fMAX  
=
2πR2Ct  
where ft is the unity gain frequency of the amplifier.  
The AD8510/AD8512/AD8513’s low input bias current, wide  
bandwidth, and low noise make them each an excellent choice  
for various photodiode applications, including fax machines,  
fiber optic controls, motion sensors, and bar code readers.  
Cf can be calculated by  
Ct  
Cf =  
2πR2 ft  
The circuit shown in Figure 53 uses a silicon diode with zero  
bias voltage. This is known as a photovoltaic mode; this  
configuration limits the overall noise and is suitable for  
instrumentation applications.  
where ft is the unity gain frequency of the op amp, and it achieves  
a phase margin, φM, of approximately 45°.  
A higher phase margin can be obtained by increasing the value  
of Cf. Setting Cf to twice the previous value yields approximately  
φM = 65° and a maximal flat frequency response, but it reduces the  
maximum signal bandwidth by 50%.  
Cf  
R2  
Using the previous parameters with a Cf ≈ 1 pF, the signal  
bandwidth is approximately 2.6 MHz.  
VEE  
Signal Transmission Applications  
4
2
One popular signal transmission method uses pulse-width  
modulation. High data rates may require a fast comparator  
rather than an op amp. However, the need for sharp, undistorted  
signals may favor using a linear amplifier.  
6
AD8510  
3
Rd  
Ct  
7
VCC  
The AD8510/AD8512/AD8513 make excellent voltage  
comparators. In addition to a high slew rate, the AD8510/  
AD8512/AD8513 have a very fast saturation recovery time. In  
the absence of feedback, the amplifiers are in open-loop mode  
(very high gain). In this mode of operation, they spend much of  
their time in saturation.  
Figure 53. Equivalent Preamplifier Photodiode Circuit  
A larger signal bandwidth can be attained at the expense of  
additional output noise. The total input capacitance (Ct)  
consists of the sum of the diode capacitance (typically 3 pF to  
4 pF) and the amplifier’s input capacitance (12 pF), which  
includes external parasitic capacitance. Ct creates a pole in the  
frequency response that can lead to an unstable system. To  
ensure stability and optimize the bandwidth of the signal, a  
capacitor is placed in the feedback loop of the circuit shown in  
Figure 53. It creates a zero and yields a bandwidth whose corner  
frequency is 1/(2π(R2Cf)).  
The circuit shown in Figure 54 was used to compare two signals  
of different frequencies, namely a 100 Hz sine wave and a 1 kHz  
triangular wave. Figure 55 shows a scope plot of the resulting  
output waveforms. A pull-up resistor (typically 5 kΩ) can be  
connected from the output to VCC if the output voltage needs to  
reach the positive rail. The trade-off is that power consumption  
is higher.  
The value of R2 can be determined by the ratio  
+15V  
V/ID  
where:  
3
7
6
V is the desired output voltage of the op amp.  
V
OUT  
ID is the diode current.  
2
4
V1  
For example, if ID is 100 μA and a 10 V output voltage is desired,  
R2 should be 100 kΩ. Rd (see Figure 53) is a junction resistance  
that drops typically by a factor of 2 for every 10°C increase in  
temperature.  
–15V  
V2  
Figure 54. Pulse-Width Modulator  
Rev. I | Page 17 of 20  
 
 
 
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中文翻译

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AD8512ARMZ 替代型号

型号 品牌 替代类型 描述 数据表
AD8512AR-REEL7 ADI

完全替代

 Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi
AD8512ARZ-REEL ADI

完全替代

 Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi

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AD8512ARMZ-R2 ADI

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 		Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi
AD8512ARMZ-REEL ADI

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 		Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi
AD8512ARMZ-REEL ROCHESTER

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 		DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8, ROHS COMPLIANT, MO-187AA, MSOP-8
AD8512AR-REEL ADI

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 		Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi
AD8512AR-REEL7 ADI

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 		Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi
AD8512AR-REEL7 ROCHESTER

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 		DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8, MS-012AA, SOIC-8
AD8512ARZ ADI

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 		Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi
AD8512ARZ ROCHESTER

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 		DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8
AD8512ARZ-REEL ADI

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 		Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi
AD8512ARZ-REEL ROCHESTER

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 		DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8

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