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AD8512 PDF预览

AD8512

更新时间: 2024-02-18 15:29:02
品牌 Logo 应用领域
亚德诺 - ADI 运算放大器
页数 文件大小 规格书
20页 682K
描述
Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers

AD8512 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.31.00.01风险等级:0.89
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.01 µA25C 时的最大偏置电流 (IIB):0.00008 µA
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电压:800 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
低-偏置:YES低-失调:YES
微功率:NO湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-5 V
功能数量:2端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
功率:NO电源:+-5/+-15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm标称压摆率:20 V/us
子类别:Operational Amplifier最大压摆率:5 mA
供电电压上限:18 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:JFET
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
标称均一增益带宽:8000 kHz宽带:NO
宽度:3.9 mmBase Number Matches:1

AD8512 数据手册

 浏览型号AD8512的Datasheet PDF文件第14页浏览型号AD8512的Datasheet PDF文件第15页浏览型号AD8512的Datasheet PDF文件第16页浏览型号AD8512的Datasheet PDF文件第18页浏览型号AD8512的Datasheet PDF文件第19页浏览型号AD8512的Datasheet PDF文件第20页 
AD8510/AD8512/AD8513  
I-V CONVERSION APPLICATIONS  
Photodiode Circuits  
includes external parasitic capacitance. Ct creates a pole in the  
frequency response, which may lead to an unstable system. To  
ensure stability and optimize the bandwidth of the signal, a  
capacitor is placed in the feedback loop of the circuit shown in  
Figure 53. It creates a zero and yields a bandwidth whose corner  
frequency is 1/(2π(R2Cf)).  
Common applications for I-V conversion include photodiode  
circuits, where the amplifier is used to convert a current emitted  
by a diode placed at the positive input terminal into an output  
voltage.  
The AD8510/AD8512/AD8513’s low input bias current, wide  
bandwidth, and low noise make them each an excellent choice  
for various photodiode applications, including fax machines,  
fiber optic controls, motion sensors, and bar code readers.  
The value of R2 can be determined by the ratio V/ID, where V is  
the desired output voltage of the op amp and ID is the diode  
current. For example, if ID is 100 µA and a 10 V output voltage is  
desired, R2 should be 100 kΩ. Rd is a junction resistance that  
drops typically by a factor of 2 for every 10°C increase in  
temperature. A typical value for Rd is 1000 MΩ. Since Rd >> R2,  
the circuit behavior is not impacted by the effect of the junction  
resistance. The maximum signal bandwidth is  
The circuit shown in Figure 53 uses a silicon diode with zero  
bias voltage. This is known as a Photovoltaic Mode; this  
configuration limits the overall noise and is suitable for  
instrumentation applications.  
Cf  
ft  
R2  
fMAX  
=
2πR2Ct  
VEE  
where ft is the unity gain frequency of the amplifier.  
4
Using the parameters above, Cf ≈ 1 pF, which yields a signal  
2
bandwidth of about 2.6 MHz.  
6
AD8510  
3
Rd  
Ct  
7
Ct  
2πR2 ft  
Cf =  
VCC  
where ft is the unity gain frequency of the op amp, achieves a  
phase margin, Φm, of approximately 45°.  
Figure 53. Equivalent Preamplifier Photodiode Circuit  
A larger signal bandwidth can be attained at the expense of  
additional output noise. The total input capacitance (Ct)  
consists of the sum of the diode capacitance (typically 3 pF to  
4 pF) and the amplifiers input capacitance (12 pF), which  
A higher phase margin can be obtained by increasing the value  
of Cf. Setting Cf to twice the previous value yields approximately  
Φm = 65° and a maximally flat frequency response, but reduces  
the maximum signal bandwidth by 50%.  
Rev. E | Page 17 of 20  
 
 

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