AD825ARZ-16-REEL7

更新时间： 2024-02-17 18:42:25

品牌	Logo	应用领域
亚德诺 - ADI		放大器
页数	文件大小	规格书
12页	450K
描述
Low Cost, General-Purpose High Speed JFET Amplifier

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数据手册

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AD825ARZ-16-REEL7 数据手册

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AD825

ABSOLUTE MAXIMUM RATINGS

PIN CONFIGURATIONS

Table 3.

Parameter

Supply ꢁoltage

Internal Power Dissipation¹

–IN

+IN

Rating

AD825

TOP VIEW

18 ꢁ

OUTPUT

(Not to Scale)

–V

Small Outline (R)

See Figure 6

ꢁ_S

See Figure 6

−6ꢀ°C to +12ꢀ°C

−40°C to +8ꢀ°C

300°C

NC = NO CONNECT

Input ꢁoltage (Common Mode)

Differential Input ꢁoltage

Output Short-Circuit Duration

Storage Temperature Range (R, R-16)

Operating Temperature Range

Figure 4. 8-Lead SOIC

16 NC

15 NC

14 NC

Lead Temperature Range

(Soldering 10 sec)

AD825

TOP VIEW

(Not to Scale)

–INPUT

+INPUT

13 +V

12 OUTPUT

11 NC

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

–V

10 NC

NC = NO CONNECT

Figure 5. 16-Lead SOIC

2.5

2.0

= 150°C

¹Specification is for device in free air:

8-lead SOIC package: θ_JA= 1ꢀꢀ°C/W

16-lead SOIC package: θ_JA= 8ꢀ°C/W

16-LEAD SOIC PACKAGE

1.5

1.0

0.5

8-LEAD SOIC PACKAGE

–50 –40 –30 –20 –10

10 20 30 40 50 60 70 80 90

AMBIENT TEMPERATURE (°C)

Figure 6. Maximum Power Dissipation vs. Temperature

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 ꢁ readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

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