AD8253

更新时间： 2024-01-30 23:33:27

品牌	Logo	应用领域
亚德诺 - ADI		仪表放大器
页数	文件大小	规格书
10页	217K
描述
10 MHz, 20 V/レs, G = 1, 10, 100, 1000 i CMOS㈢ Programmable Gain Instrumentation Amplifier

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技术参数
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AD8253 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TSSOP
包装说明：	TSSOP, TSSOP10,.19,20	针数：	10
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.31.00.01	风险等级：	1.47
Samacsys Confidence：	3	Samacsys Status：	Released
2D Presentation：	https://componentsearchengine.com/2D/0T/5501.2.1.png	Schematic Symbol：	https://componentsearchengine.com/symbol.php?partID=5501
PCB Footprint：	https://componentsearchengine.com/footprint.php?partID=5501	3D View：	https://componentsearchengine.com/viewer/3D.php?partID=5501
Samacsys PartID：	5501	Samacsys Image：	https://componentsearchengine.com/Images/9/AD8253ARMZ.jpg
Samacsys Thumbnail Image：	https://componentsearchengine.com/Thumbnails/2/AD8253ARMZ.jpg	Samacsys Pin Count：	10
Samacsys Part Category：	Integrated Circuit	Samacsys Package Category：	Small Outline Packages
Samacsys Footprint Name：	RM-10(MSOP)	Samacsys Released Date：	2015-04-16 09:48:08
Is Samacsys：	N	放大器类型：	INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB)：	0.04 µA	标称带宽 (3dB)：	10 MHz
最大输入失调电流 (IIO)：	0.03 µA	JESD-30 代码：	S-PDSO-G10
JESD-609代码：	e4	长度：	3 mm
湿度敏感等级：	1	负供电电压上限：	-17 V
标称负供电电压 (Vsup)：	-15 V	功能数量：	1
端子数量：	10	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装等效代码：	TSSOP10,.19,20
封装形状：	SQUARE	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：	260	电源：	+-5/+-15 V
认证状态：	Not Qualified	座面最大高度：	1.1 mm
标称压摆率：	25 V/us	子类别：	Instrumentation Amplifier
最大压摆率：	4.5 mA	供电电压上限：	17 V
标称供电电压 (Vsup)：	15 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	最大电压增益：	1000
最小电压增益：	1	标称电压增益：	10
宽度：	3 mm	Base Number Matches：	1

AD8253 数据手册

AD8253

Preliminary Technical Data

ABSOLUTE MAXIMUM RATINGS

Table 3.

package due to the load drive for all outputs. The quiescent

power is the voltage between the supply pins (V_S) times the

quiescent current (I_S). Assuming the load (R_L) is referenced to

midsupply, the total drive power is V_S/2 × I_OUT, some of which is

dissipated in the package and some in the load (V_OUT× I_OUT).

Parameter

Rating

17 V

Supply Voltage

Power Dissipation

See Figure 3

Indefinite¹

V_S

Output Short-Circuit Current

Common-Mode Input Voltage

Differential Input Voltage

Digital Logic Inputs

The difference between the total drive power and the load

power is the drive power dissipated in the package.

P_D= Quiescent Power + (Total Drive Power − Load Power)

Storage Temperature Range

Operating Temperature Range²

Lead Temperature (Soldering 10 sec)

Junction Temperature

–65°C to +125°C

–40°C to +85°C

300°C

⎛

⎜

⎝

⎞

⎟

⎠

V_SV_OUT

V_OUT

R_L

P_D=

(

V_S×I_S

)

–

R_L

140°C

In single-supply operation with R_Lreferenced to −V_S, worst case

is V_OUT= V_S/2.

θ_JA(4-Layer JEDEC Standard Board)

Package GlassTransitionTemperature

112°C/W

140°C

Airflow increases heat dissipation, effectively reducing θ_JA. In

addition, more metal directly in contact with the package leads

from metal traces, through holes, ground, and power planes

reduces the θ_JA.

¹Assumes the load is referenced to mid supply.

²Temperature for specified performance is −40°C to +85°C. For performance

to +125°C, see the Error! Reference source not found. section.

Figure 3 shows the maximum safe power dissipation in the

package vs. the ambient temperature on a 4-layer JEDEC

standard board.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

MAXIMUM POWER DISSIPATION

The maximum safe power dissipation in the AD8253 package is

limited by the associated rise in junction temperature (T_J) on

the die. The plastic encapsulating the die locally reaches the

junction temperature. At approximately 140°C, which is the

glass transition temperature, the plastic changes its properties.

Even temporarily exceeding this temperature limit may change

the stresses that the package exerts on the die, permanently

shifting the parametric performance of the AD8253. Exceeding

a junction temperature of 140°C for an extended period can

result in changes in silicon devices, potentially causing failure.

–40

–20

100

120

AMBIENT TEMPERATURE (°C)

Figure 3. Maximum Power Dissipation vs. Ambient Temperature

ESD CAUTION

The still-air thermal properties of the package and PCB (θ_JA),

the ambient temperature (T_A), and the total power dissipated in

the package (P_D) determine the junction temperature of the die.

The junction temperature is calculated as

T_J=T_A+

(

P_D× θ_JA

)

The power dissipated in the package (P_D) is the sum of the

quiescent power dissipation and the power dissipated in the

Rev. prA | Page 6 of 10

1...3 4 567 8 9 10

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