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AD8130ARZ-REEL7

更新时间： 2024-01-07 05:16:03
品牌 Logo 应用领域
亚德诺 - ADI 放大器光电二极管
页数 文件大小 规格书
40页 634K
描述
Low Cost 270 MHz Differential Receiver Amplifiers

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AD8130ARZ-REEL7 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：0.63
其他特性：IT CAN ALSO OPERATE FROM A DUAL +/-12V OR SINGLE 5V NOMINAL SUPPLY模拟集成电路 - 其他类型：ANALOG CIRCUIT
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：4.9 mm湿度敏感等级：1
负电源电压最大值（Vsup）：-12.6 V负电源电压最小值（Vsup）：-2.25 V
标称负供电电压 (Vsup)：-5 V功能数量：1
端子数量：8最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified座面最大高度：1.75 mm
最大供电电压 (Vsup)：12.6 V最小供电电压 (Vsup)：2.25 V
标称供电电压 (Vsup)：5 V表面贴装：YES
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
宽度：3.9 mmBase Number Matches：1

AD8130ARZ-REEL7 数据手册

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AD8129/AD8130  
ABSOLUTE MAXIMUM RATINGS  
Table 4.  
Parameter  
The power dissipated in the package (PD) is the sum of the  
quiescent power dissipation and the power dissipated in the  
package due to the load drive. The quiescent power is the  
voltage between the supply pins (VS) times the quiescent  
current (IS). The power dissipated due to the load drive  
depends upon the particular application. The power due to  
load drive is calculated by multiplying the load current by the  
associated voltage drop across the device. RMS voltages and  
currents must be used in these calculations.  
Rating  
Supply Voltage  
Power Dissipation  
26.4 V  
Refer to Figure 4  
−VS − 0.3 V to +VS + 0.3 V  
Input Voltage (Any Input)  
Differential Input Voltage (AD8129)  
VS ≥ 11.5 V  
Differential Input Voltage (AD8129)  
VS < 11.5 V  
Differential Input Voltage (AD8130)  
Storage Temperature Range  
Lead Temperature (Soldering, 10 sec)  
Junction Temperature  
0.5 V  
6.2 V  
8.4 V  
−65°C to +150°C  
300°C  
150°C  
Airflow reduces θJA. In addition, more metal directly in contact  
with the package leads from metal traces through holes, ground,  
and power planes reduces the θJA.  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Figure 4 shows the maximum safe power dissipation in the  
package vs. the ambient temperature for the 8-lead SOIC  
(121°C/W) and MSOP (θJA = 142°C/W) packages on a JEDEC  
standard 4-layer board. θJA values are approximations.  
1.75  
1.50  
1.25  
THERMAL RESISTANCE  
θJA is specified for the worst-case conditions, that is, θJA is  
specified for the device soldered in a circuit board in still air.  
1.00  
SOIC  
Table 5. Thermal Resistance  
Package Type  
0.75  
MSOP  
θJA  
Unit  
°C/W  
°C/W  
0.50  
8-Lead SOIC/4-Layer  
8-Lead MSOP/4-Layer  
121  
142  
0.25  
0
Maximum Power Dissipation  
–40–30 –20 –10  
0
10 20 30 40 50 60 70 80 90 100 110120  
AMBIENT TEMPERATURE (°C)  
The maximum safe power dissipation in the AD8129/AD8130  
packages is limited by the associated rise in junction temp-  
erature (TJ) on the die. At approximately 150°C, which is the  
glass transition temperature, the plastic changes its properties.  
Even temporarily exceeding this temperature limit can change  
the stresses that the package exerts on the die, permanently  
shifting the parametric performance of the AD8129/AD8130.  
Exceeding a junction temperature of 150°C for an extended  
period can result in changes in the silicon devices, potentially  
causing failure.  
Figure 4. Maximum Power Dissipation vs. Temperature  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on  
the human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
Rev. C | Page 9 of 40  
 
 
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中文翻译

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AD8130ARZ-REEL7 替代型号

型号 品牌 替代类型 描述 数据表
AD8130AR-REEL7 ADI

完全替代

 		Low Cost 270 MHz Differential Receiver Amplifiers
AD8130AR-REEL ADI

完全替代

 		Low Cost 270 MHz Differential Receiver Amplifiers

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