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AD5144ABRUZ100 PDF预览

AD5144ABRUZ100

更新时间： 2024-02-28 21:44:23
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
36页 784K
描述
The AD5124/AD5144/AD5144A potentiometers provide a nonvolatile solution for 128-/256-position adjustment applications, offering guaranteed low resistor tolerance errors of ±8% and up to ±6 mA current density in the Ax, Bx, and Wx pins.

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AD5144ABRUZ100 技术参数

Source Url Status Check Date：2013-05-01 14:56:10.223是否无铅： 含铅
是否Rohs认证： 符合生命周期：Active
包装说明：TSSOP,针数：20
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：2.33
其他特性：REST RESISTOR VALUES IS 10000OHM AND CONTROL INTERFACE IS INCREMENT/DECREMENT标称带宽：3 kHz
控制接口：2-WIRE SERIAL转换器类型：DIGITAL POTENTIOMETER
JESD-30 代码：R-PDSO-G20JESD-609代码：e3
长度：6.5 mm湿度敏感等级：1
标称负供电电压：-2.5 V功能数量：1
位置数：256端子数量：20
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260电阻定律：LINEAR/LOGARITHMIC
最大电阻容差：8%最大电阻器端电压：2.75 V
最小电阻器端电压：-2.25 V座面最大高度：1.2 mm
标称供电电压：2.5 V表面贴装：YES
标称温度系数：35 ppm/ °C温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30标称总电阻：100000 Ω
宽度：4.4 mmBase Number Matches：1

AD5144ABRUZ100 数据手册

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AD5124/AD5144/AD5144A  
Data Sheet  
Parameter  
Symbol  
Test Conditions/Comments  
Min  
Typ 1  
Max  
Unit  
DYNAMIC CHARACTERISTICS9  
Bandwidth  
BW  
−3 dB  
RAB = 10 kΩ  
RAB = 100 kΩ  
3
0.43  
MHz  
MHz  
Total Harmonic Distortion  
Resistor Noise Density  
VW Settling Time  
THD  
eN_WB  
tS  
VDD/VSS = 2.5 V, VA = 1 V rms,  
VB = 0 V, f = 1 kHz  
RAB = 10 kΩ  
RAB = 100 kΩ  
Code = half scale, TA = 25°C,  
f = 10 kHz  
RAB = 10 kΩ  
RAB = 100 kΩ  
VA = 5 V, VB = 0 V, from  
zero scale to full scale,  
0.5 LSB error band  
−80  
−90  
dB  
dB  
7
20  
nV/√Hz  
nV/√Hz  
RAB = 10 kΩ  
RAB = 100 kΩ  
RAB = 10 kΩ  
RAB = 100 kΩ  
2
µs  
µs  
12  
10  
25  
−90  
1
Crosstalk (CW1/CW2)  
CT  
nV-sec  
nV-sec  
dB  
Mcycles  
kcycles  
Years  
Analog Crosstalk  
Endurance10  
CTA  
TA = 25°C  
100  
Data Retention11  
50  
1 Typical values represent average readings at 25°C, VDD = 5 V, VSS = 0 V, and VLOGIC = 5 V.  
2 Resistor integral nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper  
positions. R-DNL measures the relative step change from ideal between successive tap positions. The maximum wiper current is limited to (0.7 × VDD)/RAB.  
3 Guaranteed by design and characterization, not subject to production test.  
4 INL and DNL are measured at VWB with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = 0 V. DNL specification limits  
of 1 LSB maximum are guaranteed monotonic operating conditions.  
5 Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground  
referenced bipolar signal adjustment.  
6 Different from operating current; supply current for EEPROM program lasts approximately 30 ms.  
7 Different from operating current; supply current for EEPROM read lasts approximately 20 µs.  
8 PDISS is calculated from (IDD × VDD) + (ILOGIC × VLOGIC).  
9 All dynamic characteristics use VDD/VSS  
= 2.5 V, and VLOGIC = 2.5 V.  
10 Endurance is qualified to 100,000 cycles per JEDEC Standard 22, Method A117 and measured at −40°C to +125°C.  
11 Retention lifetime equivalent at junction temperature (TJ) = 125°C per JEDEC Standard 22, Method A117. Retention lifetime, based on an activation energy of 1 eV,  
derates with junction temperature in the Flash/EE memory.  
Rev. A | Page 6 of 36  
 
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