Datasheet > AD-UMD48N

AD-UMD48N

更新时间： 2023-12-06 19:59:57

品牌	Logo	应用领域
江苏长电/长晶 - CJ		数字晶体管
页数	文件大小	规格书
7页	1367K
描述
双数字晶体管

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AD-UMD48N 数据手册

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AD-UMD48N

MAXIMUM RATINGS NPN TRANSISTOR (T_j= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Supply voltage

Input voltage

Output current

V_CC

V_IN

-10 ~ 40

100

I_O

°C

Peak collector current

I_C(MAX)

P_D

100

Maximum power dissipation

150

Operating junction and storage temperature range

T_j, T_stg

-55 ~ 150

ELECTRICAL CHARACTERISTICS NPN TRANSISTOR (T_j= 25°C unless otherwise specified)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Test condition

Min

Typ

Max

Unit

V_CC= 5V, I_O= 100µA

0.5

Input voltage

V_O= 0.3V, I_O= 2mA

Output voltage

Input current

I_O/I_I= 10mA/0.5mA

0.1

0.3

0.18

0.5

µA

V_I= 5V

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

I_O(off)

G_I

V_CC= 50V, V_I= 0V

V_O= 5V, I_O= 5mA

32.9

0.8

kΩ

R₁

61.1

1.2

R₂/R₁

f_T

V_CE= 10V, I_E= 5mA, f = 100MHz

250

MHz

MAXIMUM RATINGS PNP TRANSISTOR (T_j= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Supply voltage

Input voltage

Output current

V_CC

-50

V_IN

-12 ~ 5

-100

I_O

°C

Peak collector current

I_C(MAX)

P_D

-100

Maximum power dissipation

150

Operating junction and storage temperature range

T_j, T_stg

-55 ~ 150

ELECTRICAL CHARACTERISTICS PNP TRANSISTOR (T_j= 25°C unless otherwise specified)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Test condition

V_CC= -5V, I_O= -100µA

V_O= -0.3V, I_O= -5mA

I_O/I_I= -5mA/-0.25mA

V_I= -5V

Min

Typ

Max

Unit

-0.5

Input voltage

-1.1

-0.3

-3.6

-0.5

Output voltage

Input current

-0.1

µA

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

I_O(off)

G_I

V_CC= -50V, V_I= 0V

V_O= -5V, I_O= -10mA

1.54

kΩ

R₁

2.2

21.5

250

2.86

R₂/R₁

f_T

V_CE= -10V, I_E= -5mA, f = 100MHz

MHz

Version 1.0

2 / 7

2021-07-01

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