Datasheet > ACT-S128K32N-055P2Q

ACT-S128K32N-055P2Q

更新时间： 2025-09-08 23:27:03

品牌	Logo	应用领域
艾法斯 - AEROFLEX		内存集成电路静态存储器
页数	文件大小	规格书
10页	396K
描述
x32 SRAM Module

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数据手册

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ACT-S128K32 High Speed

4 Megabit SRAM Multichip Module

Features

■ 4 Low Power CMOS 128K x 8 SRAMs in one MCM

■ Overall configuration as 128K x 32

CIRCUIT TECHNOLOGY

www.aeroflex.com

■ Input and Output TTL Compatible

■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order

■ Full Military (-55°C to +125°C) Temperature Range

■ +5V Power Supply

General Description

■ Choice of 7 Hermetically sealed Co-fired Packages:

● 68–Lead, Low Profile CQFP (F1), 1.56"SQ x .140"max

● 68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max thickness

available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ

CQFJ footprint)

The ACT–S128K32 is a High

Speed 4 megabit CMOS SRAM

Multichip

Module

(MCM)

designed for full temperature

range, military, space, or high

reliability mass memory and

fast cache applications.

● 68–Lead, Single-Cavity CQFP (F18), .94"SQ x .140"max (Drops into the 68

Lead JEDEC .99"SQ CQFJ footprint)

● 66–Lead, PGA-Type (P2,P6 with/without shoulders), 1.185"SQ x .245"max

● 66–Lead, PGA-Type (P7,P3 with/without shoulders), 1.08"SQ x .160"max

The MCM can be organized

as a 128K x 32 bits, 256K x 16

bits or 512k x 8 bits device and

is input and output TTL

compatible. Writing is executed

when the write enable (WE)

and chip enable (CE) inputs are

low. Reading is accomplished

when WE is high and CE and

output enable (OE) are both

low. Access time grades of

17ns, 20ns, 25ns, 35ns, 45ns

and 55ns maximum are

standard.

■ Internal Decoupling Capacitors

■ DESC SMD# 5962–93187 Released (P2,P3,P6,P7)

5962–95595 Released (F1,F2,F18)

Block Diagram – PGA Type Package(P2,P7) & CQFP(F2,F18)

Pin Description

WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4

I/O0-31

Data I/O

A0–16 Address Inputs

WE1–4 Write Enables

CE1–4 Chip Enables

A0 – A16

128Kx8

Vcc

GND

Output Enable

Power Supply

Ground

The +5 Volt power supply

version is standard and the

+3.3 Volt low power model is

available (See ACT-S128K32V

data sheet).

Not Connected

I/O0-7

I/O8-15

I/O16-23

I/O24-31

The products are designed for

operation over the temperature

range of -55°C to +125°C and

screened under the full military

environment. DESC Standard

Military Drawing (SMD) part

numbers are released and

available.

Block Diagram – CQFP(F1)

Pin Description

I/O0-31

Data I/O

CE1

CE2

CE3

CE4

A0–16 Address Inputs

A0 – A16

Write Enable

CE1–4 Chip Enables

128Kx8

The

ACT-S128K32

128Kx8

Vcc

GND

Output Enable

Power Supply

Ground

manufactured in Aeroflex’s

80,000ft

certified facility in Plainview,

N.Y.

MIL-PRF-38534

Not Connected

I/O0-7

I/O8-15

I/O16-23

I/O24-31

12 3 4 5 6 7...10

中文翻译

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与ACT-S128K32N-055P2Q相关器件

型号	品牌	获取价格	描述	数据表
ACT-S128K32N-055P7Q	AEROFLEX	获取价格	x32 SRAM Module
ACT-S128K32V	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-017F2Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-017P7Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-020F2Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-020P7Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-025F2Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-025P7Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-035F2Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-035P7Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module

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