Datasheet > ACT-S128K32V020F2M

ACT-S128K32V020F2M

更新时间： 2024-11-18 22:19:11

品牌	Logo	应用领域
艾法斯 - AEROFLEX		静态存储器
页数	文件大小	规格书
7页	123K
描述
ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module

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中文翻译

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ACT-S128K32V High Speed 3.3Volt

4 Megabit SRAM Multichip Module

Features

■ 4 Low Power CMOS 128K x 8 SRAMs in one MCM

■ Overall configuration as 128K x 32

■ Input and Output TTL Compatible

■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by

CIRCUIT TECHNOLOGY

www.aeroflex.com/act1.htm

Special Order

■ Full Military (-55°C to +125°C) Temperature Range

■ +3.3V Power Supply

■ Choice of Surface Mount or PGA Type Co-fired Packages:

● 68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max thickness

available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ

CQFJ footprint)

General Description

The ACT–S128K32V is a High

Speed 4 megabit CMOS SRAM

● 66–Lead, PGA-Type (P7), 1.08"SQ x .160"max

Multichip

Module

(MCM)

■ Internal Decoupling Capacitors

■DESC SMD# Pending

designed for full temperature

range, 3.3V Power Supply,

military, space, or high reliability

mass memory and fast cache

applications.

Block Diagram – PGA Type Package(P7) & CQFP(F2)

The MCM can be organized

as a 128K x 32 bits, 256K x 16

bits or 512k x 8 bits device and

is input and output TTL

compatible. Writing is executed

when the write enable (WE)

and chip enable (CE) inputs are

low. Reading is accomplished

when WE is high and CE and

output enable (OE) are both

low. Access time grades of

17ns, 20ns, 25ns, 35ns, 45ns

and 55ns maximum are

standard.

WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4

A0 – A16

128Kx8

I/O0-7

I/O8-15

I/O16-23

I/O24-31

The products are designed for

operation over the temperature

range of -55°C to +125°C and

screened under the full military

environment. DESC Standard

Military Drawing (SMD) part

numbers are pending.

Pin Description

I/O0-31 Data I/O

A0–16 Address Inputs

WE1–4 Write Enables

CE1–4 Chip Enables

The

ACT-S128K32V

Vcc

GND

Output Enable

Power Supply

Ground

manufactured in Aeroflex’s

80,000ft

certified facility in Plainview,

N.Y.

MIL-PRF-38534

Not Connected

12 3 4 5 6 7

中文翻译

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与ACT-S128K32V020F2M相关器件

型号	品牌	获取价格	描述	数据表
ACT-S128K32V020F2Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-020F2Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V020F2T	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V020P7C	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V020P7I	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V020P7M	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V020P7Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-020P7Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V020P7T	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module
ACT-S128K32V-025F2Q	AEROFLEX	获取价格	ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module

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