Datasheet > ACST1035-8FP

ACST1035-8FP

更新时间： 2023-12-20 18:44:12

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关
页数	文件大小	规格书
13页	466K
描述
过压保护10 A 800 V交流开关

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ACST1035-8FP 数据手册

ACST1035-8FP

Figure 8: Non repetitive surge peak on-state

Characteristics

Figure 9: Relative variation of gate trigger current

and gate trigger voltage versus junction

temperature (typical values)

current for a sinusoidal pulse with width t_p< 10 ms

I_TSM(A), I²t (A²s)

1000

T initial = 25°C

dI/dt limitation: 100 A/µs

TSM

100

t_p(ms)

0.01

0.10

1.00

10.00

Figure 10: Relative variation of holding current and

latching current versus junction temperature

(typical values)

Figure 11: Relative variation of critical rate of

decrease of main current (dI/dt)c versus reapplied

(dV/dt)c

(dl/dt)c[(dV/dt)c] / specified (dl/dt)c

T_j= 150 °C

(dV/dt)c (V/µs)

100.0

0.1

1.0

10.0

Figure 12: Relative variation of critical rate of

decrease of main current versus junction

temperature (typical values)

Figure 13: Relative variation of static dV/dt

immunity versus junction temperature

dV/dt[T ] / dV/dt[T = 150 °C]

(dI/dt)_C[T_j] / (dI/dt)_c[T_j= 150 °C]

VD = VR = 536 V

(dV/dt) > 5KV/µs

T_j(°C)

T (°C)

100

125

150

100

125

150

DocID025321 Rev 2

5/13

1 2 3 456 7 8...13

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