Datasheet > ACST1035-8FP

ACST1035-8FP

更新时间： 2023-12-20 18:44:12

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关
页数	文件大小	规格书
13页	466K
描述
过压保护10 A 800 V交流开关

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ACST1035-8FP 数据手册

Characteristics

ACST1035-8FP

Characteristics

Table 2: Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

I_T(RMS)

RMS on-state current (full sine wave)

T_c= 108 °C

t_p=16.7 ms

t_p= 20 ms

Non repetitive surge

peak on-state current

I_TSM

I²t

T_jinitial = 25 °C

I²t value for fusing

(full cycle sine wave)

t_p= 10 ms

A²s

V_RRM

V_DRM

Repetitive peak off-state voltage

T_j= 150 °C

800

Critical rate of rise of

on-state current

I_G= 2 x I_GT

tr ≤ 100 ns

dl/dt

f = 120 Hz, T_j= 150 ° C

T_jinitial = 25 °C

100

A/µs

(1)

V_pp

Non repetitive peak pulse line voltage

Non repetitive critical current rate of

rise at breakover

(dl/dt)_BO

T_jinitial = 25 °C

150

A/µs

I_GM

P_GM

P_G(AV)

T_stg

T_j

Peak gate current

t_p= 20 µs

T_j= 150 °C

Peak gate power

Average gate power dissipation

0.1

°C

Storage junction temperature range

-40 to +150

260

Maximum operating junction temperature range

Maximum lead temperature for soldering during 10 s

Insulation RMS voltage (60 seconds)

T_L

V_ins

2000

Notes:

⁽¹⁾According to test described by IEC 61000-4-5 standard and test Fig 19.

2/13

DocID025321 Rev 2

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