Datasheet > ACJ110-8U

ACJ110-8U

更新时间： 2023-12-06 20:10:00

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
9页	972K
描述
瞬态抑制型双向可控硅

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ACJ110-8U 数据手册

ACJ110-8U

JieJie Microelectronics CO. , Ltd.

FIG.1 Maximum power dissipation versus RMS

FIG.2: RMS on-state current versus case

on-state current

temperature

I_T(RMS)(A)

P(W)

1.8

1.2

1.6

1.4

1.2

42℃

0.8

0.6

0.4

0.2

0.8

0.6

0.4

0.2

0.4

0.6

I_T(RMS)(A)

0.8

1.2

100

125

T_C(℃)

FIG.3: Surge peak on-state current versus

FIG.4: On-state characteristics

number of cycles

I_TSM(A)

I_TM(A)

Tj=25℃ typ

Tj=25℃ max

Tj=125℃ typ

T =25℃,t_p=20ms,one cycle,sine

0.1

0.5

1.5

V_TM(V)

2.5

1.E+0

1.E+1

1.E+2

1.E+3

1.E+4

1.E+5

Number

of cycles

FIG.5: Non-repetitive surge peak on-state current

for a sinusoidal pulse with width t_p<20ms, and

corresponding value of I²t (dI/dt<100A/μs)

I_TSM(A), I²t(A²s)

FIG.6: Relative variations of gate trigger

current, holding current and latching

current versus junction temperature

I_GT,I_H,I_L(Tj)/I_GT,I_H,I_L(T_j=25℃)

IGT(I/II)&IH

100

IGT(III)

2.5

I_TSM

dI/dt

1.5

I²t

0.5

0.1

0.01

0.1

-40

-20

100

120

140

T_j(℃)

t_p(ms)

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1 2 345 6 7...9

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