Datasheet > ACE1551B

ACE1551B

更新时间： 2022-04-14 02:36:08

品牌	Logo	应用领域
ACE		晶体晶体管
页数	文件大小	规格书
7页	669K
描述
N-Channel Enhancement Mode Field Effect Transistor

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ACE1551B 数据手册

ACE1551B

N-Channel Enhancement Mode Field Effect Transistor

Description

The ACE1551B combines advanced trench MOSFET technology with a low resistance package to

provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,

Pagers.

Features

 VDS =20V

 I_D=0.7A

 RDS(ON)<360mΩ (V_GS=4.5V)

 RDS(ON)<420mΩ (V_GS=2.5V)

 RDS(ON)<560mΩ (V_GS=1.8V)

Absolute Maximum Ratings

Parameter

Symbol Max Unit

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

±12

700

560

T_A=25℃

T_A=70℃

Continuous Drain Current * AC

Pulsed Drain Current * B

Power Dissipation

I_D

I_DM

P_D

T_A=25℃

T_A=70℃

0.27

0.16

Operating Junction Temperature / Storage Temperature Range T_J/T_STG-55/150 C

Packaging Type

SOT-723

VER 1.2

12 3 4 5 6 7

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