Datasheet > ACE1561BEBM+H

ACE1561BEBM+H

更新时间： 2022-02-26 13:57:31

品牌	Logo	应用领域
ACE		/
页数	文件大小	规格书
6页	658K
描述
P-Channel Enhancement Mode Field Effect Transistor

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ACE1561BEBM+H 数据手册

ACE1561BE

P-Channel Enhancement Mode Field Effect Transistor

Description

provide excellent R_DS(ON)and low gate charge.

The ACE1561BE uses advanced trench technology to

This

device is suitable for use as a load switch or in PWM applications.

Features



V_DS(V) = -20V,I_D= -3A

R_DS(ON)=90mΩ @ V_GS= -4.5V

R_DS(ON)=110mΩ @ V_GS= -2.5V

SOT23-3 Package

Absolute Maximum Ratings

Parameter

Symbol

V_DSS

Max

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±8

T_A=25℃

T_A=70℃

-3

Drain Current (Continuous)

I_D

-2

Drain Current (Pulsed)

Power Dissipation

I_DM

P_D

-12

℃

T_A=25℃

1.3

Operating temperature / storage temperature

T_J/T_STG

-55~150

Packaging Type

SOT-23-3

Ordering information

ACE1561BE XX+H

Halogen - free

Pb - free

BM: SOT-23-3

VER 1.1

12 3 4 5 6

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