Datasheet > ACE1561BE

ACE1561BE

更新时间： 2022-02-26 13:57:31

品牌	Logo	应用领域
ACE		/
页数	文件大小	规格书
6页	658K
描述
P-Channel Enhancement Mode Field Effect Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ACE1561BE 数据手册

ACE1561BE

P-Channel Enhancement Mode Field Effect Transistor

Description

provide excellent R_DS(ON)and low gate charge.

The ACE1561BE uses advanced trench technology to

This

device is suitable for use as a load switch or in PWM applications.

Features



V_DS(V) = -20V,I_D= -3A

R_DS(ON)=90mΩ @ V_GS= -4.5V

R_DS(ON)=110mΩ @ V_GS= -2.5V

SOT23-3 Package

Absolute Maximum Ratings

Parameter

Symbol

V_DSS

Max

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±8

T_A=25℃

T_A=70℃

-3

Drain Current (Continuous)

I_D

-2

Drain Current (Pulsed)

Power Dissipation

I_DM

P_D

-12

℃

T_A=25℃

1.3

Operating temperature / storage temperature

T_J/T_STG

-55~150

Packaging Type

SOT-23-3

Ordering information

ACE1561BE XX+H

Halogen - free

Pb - free

BM: SOT-23-3

VER 1.1

12 3 4 5 6

下载PDF

与ACE1561BE相关器件

型号	品牌	描述	获取价格	数据表
ACE1561BEBM+H	ACE	P-Channel Enhancement Mode Field Effect Transistor	获取价格
ACE15DHFD	ETC	CONN EDGE DUAL FMALE 30POS 0.039	获取价格
ACE15DHFN	ETC	CONN EDGE DUAL FMALE 30POS 0.039	获取价格
ACE15DHFR	ETC	CONN EDGE DUAL FMALE 30POS 0.039	获取价格
ACE15DHFT	ETC	CONN EDGE DUAL FMALE 30POS 0.039	获取价格
ACE15DHHD	ETC	CONN EDGE DUAL FMALE 30POS 0.039	获取价格