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ABX8039QC-T PDF预览

ABX8039QC-T

更新时间: 2024-02-05 11:33:35
品牌 Logo 应用领域
ABRACON 振荡器石英晶振输出元件机械
页数 文件大小 规格书
10页 215K
描述
38-640MHz Low Phase Noise XO

ABX8039QC-T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.33Is Samacsys:N
其他特性:TAPE AND REEL; CMOS OUTPUT AVAILABLE; TRI-STATE FUNCTION最长下降时间:1 ns
频率调整-机械:NOJESD-609代码:e0
安装特点:SURFACE MOUNT最大工作频率:640 MHz
最小工作频率:38 MHz最高工作温度:85 °C
最低工作温度:-40 °C振荡器类型:LVDS
输出负载:100 OHM物理尺寸:3.0mm x 3.0mm x 0.75mm
最长上升时间:1 ns最大供电电压:3.63 V
最小供电电压:2.25 V表面贴装:YES
最大对称度:55/45 %端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

ABX8039QC-T 数据手册

 浏览型号ABX8039QC-T的Datasheet PDF文件第1页浏览型号ABX8039QC-T的Datasheet PDF文件第2页浏览型号ABX8039QC-T的Datasheet PDF文件第3页浏览型号ABX8039QC-T的Datasheet PDF文件第5页浏览型号ABX8039QC-T的Datasheet PDF文件第6页浏览型号ABX8039QC-T的Datasheet PDF文件第7页 
(Preliminary) ABX8037/38/39  
38-640MHz Low Phase Noise XO  
ELECTRICAL SPECIFICATIONS  
1. Absolute Maximum Ratings  
PARAMETERS  
SYMBOL  
MIN.  
MAX.  
UNITS  
Supply Voltage  
VDD  
VI  
4.6  
VDD+0.5  
VDD+0.5  
150  
V
Input Voltage, dc  
-0.5  
-0.5  
-65  
V
Output Voltage, dc  
VO  
TS  
TA  
TJ  
V
Storage Temperature  
°C  
°C  
°C  
°C  
kV  
Ambient Operating Temperature*  
Junction Temperature  
-40  
85  
125  
Lead Temperature (soldering, 10s)  
ESD Protection, Human Body Model  
260  
2
Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the  
device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other  
conditions above the operational limits noted in this specification is not implied.  
* Note: Operating Temperature is guaranteed by design for all parts (COMMERCIAL and INDUSTRIAL), but tested for COMMERCIAL grade only.  
2. Crystal Specifications  
PARAMETERS  
SYMBOL  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Crystal Resonator Frequency  
Crystal Loading Rating  
Crystal Shunt Capacitance  
Recommended ESR  
FXIN  
CL (xtal)  
C0 (xtal)  
RE  
Parallel Fundamental Mode  
19  
40  
MHz  
pF  
17.7  
5
pF  
AT cut  
30  
Note: Crystal Loading rating: 17.7pF is the loading the crystal sees from the XO chip. It is assumed that the crystal will be at nominal frequency at this  
load. If the crystal requires less load to be at nominal frequency, then a capacitor can placed in series with the crystal. If the crystal requires more  
load to be at nominal frequency, capacitors can be placed from XIN and XOUT to ground. This however may reduce the oscillator gain.  
3. General Electrical Specifications  
PARAMETERS SYMBOL  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Supply Current,  
Dynamic (with  
Loaded Outputs)  
Operating Voltage  
PECL/LVDS/CMOS 38MHz<Fout<320MHz  
65/45/30  
90/70  
IDD  
mA  
V
PECL/LVDS  
320MHz<Fout<640MHz  
VDD  
2.25  
3.63  
@ 50% VDD (CMOS)  
@ 1.25V (LVDS)  
@ VDD – 1.3V (PECL)  
45  
45  
45  
50  
50  
50  
55  
55  
55  
Output Clock  
Duty Cycle  
%
Short Circuit  
Current  
mA  
±50  
Note: CMOS operation is not advised above 200MHz with 15pF load; and 320MHz with 10pF load.  
30332 Esperanza., Rancho Santa Margarita, Ca 92688 Ph: 949-546-8000 Fax: 949-546-8001 www.Abracon.com 9/1/05 Page 4  

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