Datasheet > AA16-9DIL18

AA16-9DIL18

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
虹扬 - HY		光电二极管光电二极管
页数	文件大小	规格书
2页	307K
描述
Avalanche Photodiode Array

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AA16-9DIL18 数据手册

AA16-9 DIL18

16 Element

Avalanche Photodiode Array

Special characteristics:

quantum efficiency >80% at λ 760-910 nm

high speed, low noise

good uniformity between elements

low cross talk

Package DIL18:

Parameters:

AA16-9 DIL18

no. of Elements

Active Area / Element

[µm]

Gap / Separation

[µm]

Pitch

[µm]

Spectral Range

Spectral Responsivity ¹⁾

(at 905 nm, M = 100)

648 * 208

13 12

17 16 15

112

320

22.8

450 … 1050

min. 55 A/W

typ. 60 A/W

1.5

Max. Gain

(Ipo= 1nA)

typ. 100

Dark Current ¹⁾

(M = 100)

typ. 5 nA

typ. 2 pF

100 … 300 V

typ. 2 ns

window

Capacitance ¹⁾/Element

(M=100)

0.7

Breakdown Voltage U_BR

(at I_D= 2 µA)

Rise Time

at 905 nm, 50 Ω

Cross-talk

(at 905 nm)

Photo Current Uniformity

(at M= 50)

Dark Current Uniformity

(at M= 50)

Operating Temperature

Storage Temperature

2.54

typ. 50 dB

± 20 %

typ. ± 5 %

± 20 %

typ. ± 5 %

-20 ... +70 °C

-60 ... +100 °C

Pin no.

Function

Element

Guard Ring

Element

1) measurement conditions:

Setup of photo current 1.0 nA at M = 1 and irradiation by a IRED

(880 nm, 80 nm bandwith).

Common Anode

Element

Increase the photo current up to 100 nA, (M = 100) by internal multiplication

due to an increasing bias voltage.

www.silicon-sensor.com

www.pacific-sensor.com

Version: 06-03-03

Specification before: AD-LA-16-9-DIL 18

Order Number: 500038

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