Datasheet > 存储 > SRAM> A63P0636E-3.8

A63P0636E-3.8

更新时间： 2024-02-05 23:10:27

品牌	Logo	应用领域
联笙电子 - AMICC		计数器静态存储器
页数	文件大小	规格书
17页	258K
描述
1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output

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技术参数
数据手册

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A63P0636E-3.8 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Base Number Matches：	1

A63P0636E-3.8 数据手册

A63P0636

DC Electrical Characteristics

(0°C ≤ TA ≤ 70°C, VCC, VCCQ = 2.5V+10% or 2.5V-5%, unless otherwise noted)

Symbol

⏐ILI⏐

Parameter

Min.

Max.

±2.0

Unit

µA

Test Conditions

All inputs VIN = GND to VCC

OE = VIH, Vout = GND to VCC

Device selected; VCC = max.

Note

Input Leakage Current

Output Leakage Current

⏐ILO⏐

µA

I^CC1

Supply Current

Standby Current

400

180

Iout = 0mA, all inputs = VIH or VIL

Cycle time = t^KCmin.

3, 11

Device deselected; VCC = max.

All inputs are fixed.

All inputs ≥ VCC - 0.2V

or ≤ GND + 0.2V

I^SB1

Cycle time = t^KCmin.

ISB2

VOL

VOH

150

0.4

ZZ ≥ VCC - 0.2V

IOL = 1 mA

Output Low Voltage

Output High Voltage

2.0

IOH = -1 mA

Capacitance

Symbol

CIN

Parameter

Input Capacitance

Input/Output Capacitance

Typ.

Max.

Unit

Conditions

T^A= 25 C; f = 1MHz

VCC = 2.5V

CI/O

* These parameters are sampled and not 100% tested.

PRELIMINARY

(July, 2005, Version 0.0)

AMIC Technology, Corp.

1...6 7 8910 11 12...17

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