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A62S8308M-55S PDF预览

A62S8308M-55S

更新时间: 2022-01-13 11:31:17
品牌 Logo 应用领域
联笙电子 - AMICC 静态存储器
页数 文件大小 规格书
17页 266K
描述
256K X 8 BIT LOW VOLTAGE CMOS SRAM

A62S8308M-55S 数据手册

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A62S8308 Series  
AC Characteristics (TA = 0°C to + 70°C or -25°C to 85°C, VCC = 2.7V to 3.6V)  
Symbol  
Parameter  
A62S8308-55S/SI  
A62S8308-70S/SI  
Unit  
(VCC = 3.0V to 3.6V) (VCC = 2.7V to 3.6V)  
Min.  
Max.  
Min.  
Max.  
Read Cycle  
tRC  
Read Cycle Time  
55  
-
-
70  
-
-
ns  
ns  
ns  
tAA  
Address Access Time  
55  
55  
70  
70  
tACE1  
Chip Enable Access Time  
-
-
CE1  
CE2  
tACE2  
tOE  
55  
30  
-
-
-
70  
35  
-
ns  
ns  
ns  
-
-
Output Enable to Output Valid  
Chip Enable to Output in Low Z  
tCLZ1  
10  
10  
CE1  
CE2  
tCLZ2  
tOLZ  
10  
5
-
-
10  
5
-
-
ns  
ns  
ns  
Output Enable to Output in Low Z  
Chip Disable to Output in High Z  
tCHZ1  
0
20  
0
25  
CE1  
CE2  
tCHZ2  
tOHZ  
0
0
5
20  
20  
-
0
0
25  
25  
-
ns  
ns  
ns  
Output Disable to Output in High Z  
Output Hold from Address Change  
tOH  
10  
Read Cycle  
tWC  
Write Cycle Time  
55  
50  
0
-
-
70  
60  
0
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCW  
Chip Enable to End of Write  
Address Setup Time  
tAS  
-
-
tAW  
Address Valid to End of Write  
Write Pulse Width  
50  
40  
0
-
60  
50  
0
-
tWP  
-
-
tWR  
Write Recovery Time  
-
-
tWHZ  
tDW  
Write to Output in High Z  
Data to Write Time Overlap  
Data Hold from Write Time  
Output Active from End of Write  
0
25  
-
0
25  
-
25  
0
30  
0
tDH  
-
-
tOW  
5
-
5
-
Notes: tCHZ1, tCHZ2, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are  
not referred to output voltage levels.  
PRELIMINARY  
(March, 2001, Version 0.2)  
5
AMIC Technology, Inc.  

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