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A4900KLQTR-T PDF预览

A4900KLQTR-T

更新时间: 2022-02-26 13:30:30
品牌 Logo 应用领域
急速微 - ALLEGRO
页数 文件大小 规格书
17页 746K
描述
High Voltage Three Phase Gate Driver

A4900KLQTR-T 数据手册

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A4900  
High Voltage Three Phase Gate Driver  
ELECTRICAL CHARACTERISTICS (continued) Valid at TJ = –40°C to 150°C, VCC = 15 V; unless otherwise specified  
Characteristic  
Logic Inputs and Outputs (continued)  
Input Pull-Down Resistor  
RESETn Shutdown Time  
RESETn Start-up Time  
Reset Hold-Off Delay Time  
RESETn Pulse Time  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
RPD  
tRSD  
tRSU  
tRHD  
tRES  
tRF  
All digital inputs  
10  
50  
kΩ  
µs  
15  
5
20  
µs  
µs  
0.3  
3.5  
200  
µs  
RESETn Pulse Filter Time  
Protection  
ns  
VCCUVoff VCC falling  
VCCUVon VCC rising  
VCCUVhys  
9
10  
10  
11  
1
11  
12  
V
V
V
V
V
V
V
VCC Undervoltage Threshold  
VCC Undervoltage Hysteresis  
Bootstrap Undervoltage Threshold  
Bootstrap Undervoltage Hysteresis  
VBCUVoff BCx with respect to Sx, VBCx falling  
9
10  
11  
1
11  
12  
VBCUVon BCx with respect to Sx, VBCx rising  
10  
VBCUVHys  
VDSTH  
V
DS Threshold  
1.8  
2.0  
2.2  
VDM = 2.2 V (either VDM = VDHx – VSx, or  
IDMH  
Drain Monitor Input Current  
100  
nA  
VDM = VDLx  
)
Drain Monitor Clamp Voltage  
Drain Monitor Blank Time  
Overtemperature Flag  
VDMC  
tBL  
2
5
3
4.5  
V
µs  
ºC  
ºC  
TJF  
Temperature increasing  
Recovery = TJF – TJHyst  
155  
170  
15  
Overtemperature Hysteresis  
TJHyst  
*For input and output current specifications, negative current is defined as coming out of (sourcing) the specified device pin.  
Allegro MicroSystems, LLC  
115 Northeast Cutoff  
6
Worcester, Massachusetts 01615-0036 U.S.A.  
1.508.853.5000; www.allegromicro.com  

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