A4900
High Voltage Three Phase Gate Driver
ELECTRICAL CHARACTERISTICS (continued) Valid at TJ = –40°C to 150°C, VCC = 15 V; unless otherwise specified
Characteristic
Logic Inputs and Outputs (continued)
Input Pull-Down Resistor
RESETn Shutdown Time
RESETn Start-up Time
Reset Hold-Off Delay Time
RESETn Pulse Time
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
RPD
tRSD
tRSU
tRHD
tRES
tRF
All digital inputs
–
10
–
50
–
–
–
kΩ
µs
15
5
20
–
µs
–
µs
0.3
–
–
3.5
200
µs
RESETn Pulse Filter Time
Protection
–
ns
VCCUVoff VCC falling
VCCUVon VCC rising
VCCUVhys
9
10
–
10
11
1
11
12
–
V
V
V
V
V
V
V
VCC Undervoltage Threshold
VCC Undervoltage Hysteresis
Bootstrap Undervoltage Threshold
Bootstrap Undervoltage Hysteresis
VBCUVoff BCx with respect to Sx, VBCx falling
9
10
11
1
11
12
–
VBCUVon BCx with respect to Sx, VBCx rising
10
–
VBCUVHys
VDSTH
V
DS Threshold
1.8
2.0
2.2
VDM = 2.2 V (either VDM = VDHx – VSx, or
IDMH
Drain Monitor Input Current
–
–
100
nA
VDM = VDLx
)
Drain Monitor Clamp Voltage
Drain Monitor Blank Time
Overtemperature Flag
VDMC
tBL
–
2
5
3
–
4.5
–
V
µs
ºC
ºC
TJF
Temperature increasing
Recovery = TJF – TJHyst
155
–
170
15
Overtemperature Hysteresis
TJHyst
–
*For input and output current specifications, negative current is defined as coming out of (sourcing) the specified device pin.
Allegro MicroSystems, LLC
115 Northeast Cutoff
6
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com