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A43E0632G-75I PDF预览

A43E0632G-75I

更新时间: 2022-04-25 03:48:45
品牌 Logo 应用领域
联笙电子 - AMICC 动态存储器
页数 文件大小 规格书
42页 502K
描述
1M X 16 Bit X 4 Banks Synchronous DRAM

A43E0632G-75I 数据手册

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A43L2616B  
Simplified Truth Table  
Command  
CKEn-1 CKEn CS RAS  
DQM BA0 A10 A9~A0, Notes  
CAS  
L
WE  
L
BA1 /AP  
A11  
Register  
Mode Register Set  
Auto Refresh  
1,2  
H
H
X
L
L
X
X
OP CODE  
3
3
3
Refresh  
H
L
L
L
L
L
H
H
X
Entry  
Self  
H
H
Refresh  
Exit  
L
H
X
X
X
X
H
L
X
L
X
H
X
H
3
4
Bank Active & Row Addr.  
H
V
V
Row Addr.  
Read &  
Column Addr.  
Auto Precharge Disable  
Auto Precharge Enable  
Auto Precharge Disable  
Auto Precharge Enable  
L
Column  
Addr.  
4
H
X
L
H
L
H
X
H
L
4,5  
4
Write &  
Column  
Addr.  
H
H
X
X
L
L
H
H
L
L
L
X
X
V
Column Addr.  
H
4,5  
Burst Stop  
Precharge  
H
X
Bank Selection  
Both Banks  
V
X
L
H
X
L
L
H
L
X
X
H
L
H
X
L
H
X
X
H
X
V
X
X
H
X
H
X
X
H
X
V
X
H
X
X
H
X
V
X
Entry  
H
L
L
H
L
X
X
X
Clock Suspend or  
Active Power Down  
X
X
Exit  
Entry  
H
H
L
Precharge Power Down Mode  
Exit  
L
H
H
H
X
X
V
X
H
DQM  
X
X
6
L
H
X
H
X
No Operation Command  
H
(V = Valid, X = Don’t Care, H = Logic High, L = Logic Low)  
Note : 1. OP Code: Operand Code  
A0~A11, BA0, BA1: Program keys. (@MRS)  
2. MRS can be issued only at both banks precharge state.  
A new command can be issued after 2 clock cycle of MRS.  
3. Auto refresh functions as same as CBR refresh of DRAM.  
The automatical precharge without Row precharge command is meant by “Auto”.  
Auto/Self refresh can be issued only at both precharge state.  
4. BA0, BA1 : Bank select address.  
If both BA1 and BA0 are “Low” at read, write, row active and precharge, bank A is selected.  
If both BA1 is “Low” and BA0 is “High” at read, write, row active and precharge, bank B is selected.  
If both BA1 is “High” and BA0 is “Low” at read, write, row active and precharge, bank C is selected.  
If both BA1 and BA0 are “High” at read, write, row active and precharge, bank D is selected.  
If A10/AP is “High” at row precharge, BA1 and BA0 is ignored and all banks are selected.  
5. During burst read or write with auto precharge, new read write command cannot be issued.  
Another bank read write command can be issued at every burst length.  
6. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0) but  
masks the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2)  
(December, 2009, Version 1.3)  
8
AMIC Technology, Corp.  

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