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A416316BV-40F PDF预览

A416316BV-40F

更新时间: 2024-02-16 20:46:41
品牌 Logo 应用领域
联笙电子 - AMICC /
页数 文件大小 规格书
25页 405K
描述
Fast Page DRAM, 64KX16, 40ns, CMOS, PDSO40, TSOP2-44/40

A416316BV-40F 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:TSOP2, TSOP40/44,.46,32Reach Compliance Code:unknown
风险等级:5.48Is Samacsys:N
访问模式:FAST PAGE最长访问时间:40 ns
其他特性:SELF REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G40长度:18.41 mm
内存密度:1048576 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:40
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP40/44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:5 V认证状态:Not Qualified
刷新周期:256座面最大高度:1.2 mm
自我刷新:YES最大待机电流:0.002 A
子类别:DRAMs最大压摆率:0.075 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

A416316BV-40F 数据手册

 浏览型号A416316BV-40F的Datasheet PDF文件第7页浏览型号A416316BV-40F的Datasheet PDF文件第8页浏览型号A416316BV-40F的Datasheet PDF文件第9页浏览型号A416316BV-40F的Datasheet PDF文件第11页浏览型号A416316BV-40F的Datasheet PDF文件第12页浏览型号A416316BV-40F的Datasheet PDF文件第13页 
A416316B Series  
AC Characteristics (continued)  
(VCC = 5V ± 10%, VSS = 0V, Ta = 0°C to +70°C)  
Std  
-30  
-35  
-40  
#
Symbol  
Parameter  
Unit Notes  
Min. Max. Min. Max. Min. Max.  
55  
56  
tOEH  
tCPT  
0
-
-
0
-
-
0
-
-
ns  
ns  
OE Command Hold Time  
20  
20  
20  
CAS Precharge Time  
( CAS -before-RAS Counter Test)  
Notes:  
1. ICC1, ICC3, ICC4, and ICC5 depend on cycle rate.  
2. ICC1 and ICC4 depend on output loading. Specified values are obtained with the outputs open.  
3. An initial pause of 200ms is required after power-up followed by any 8 RAS cycles before proper device operation is  
achieved. In the case of an internal refresh counter, a minimum of 8 CAS -before-RAS initialization cycles instead of 8  
RAS cycles are required. 8 initialization cycles are required after extended periods of bias without clocks (greater than  
8ms).  
4. AC Characteristics assume tT = 3ns. All AC parameters are measured with a load equivalent to one TTL loads and  
50pF, VIL (min.) ³ GND and VIH (max.) £ VCC.  
5. VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are measured  
between VIH and VIL.  
6. Operation within the tRCD (max.) limit insures that tRAC (max.) can be met. tRCD (max.) is specified as a reference  
point only. If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled exclusively by tCAC.  
7. Operation within the tRAD (max.) limit insures that tRAC (max.) can be met. tRAD (max.) is specified as a reference  
point only. If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled exclusively by tAA.  
8. Assumes three state test load (5pF and a 380W Thevenin equivalent).  
9. Either tRCH or tRRH must be satisfied for a read cycle.  
10. tOFF (max.) defines the time at which the output achieves the open circuit condition; it is not referenced to output  
voltage levels.  
11. tWCS, tWCH, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet  
as electrical characteristics only. If tWCS ³ tWCS (min.) and tWCH ³ tWCH (min.), the cycle is an early write cycle  
and data-out pins will remain open circuit, high impedance, throughout the entire cycle. If tRWD ³ tRWD (min.) , tCWD ³  
tCWD (min.) and tAWD ³ tAWD (min.), the cycle is a read-modify-write cycle and the data out will contain data read from  
the selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is  
indeterminate.  
12. These parameters are referenced to  
read-modify-write cycles.  
and  
leading edge in early write cycles and to WE leading edge in  
LCAS  
UCAS  
13. Access time is determined by the longer of tAA or tCAC or tCPA.  
14. tASC ³ tCP to achieve tPC (min.) and tCPA (max.) values.  
15. These parameters are sampled and not 100% tested.  
PRELIMINARY (November, 2000, Version 0.0)  
9
AMIC Technology, Inc.  

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