Datasheet > A400CB12VI

A400CB12VI

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
44页	850K
描述
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

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数据手册

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A400CB12VI 数据手册

D A T A S H E E T

AC CHARACTERISTICS

555 for program

2AA for erase

PA for program

SA for sector erase

555 for chip erase

Data# Polling

Addresses

t_WC

t_AS

t_AH

t_WH

WE#

t_GHEL

OE#

t_{WHWH1 or 2}

t_CP

CE#

t_WS

t_CPH

t_DS

t_BUSY

t_DH

DQ7#

D_OUT

Data

t_RH

A0 for program

55 for erase

PD for program

30 for sector erase

10 for chip erase

RESET#

RY/BY#

Notes:

1. PA = program address, PD = program data, DQ7# = complement of the data written, D_OUT= data written

2. Figure indicates the last two bus cycles of command sequence.

3. Word mode address used as an example.

Figure 24. Alternate CE# Controlled

Write Operation Timings

January 23, 2007 Am29SL400C_00_A6

Am29SL400C

1...36 37 383940 41 42...44

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