Document Number: A3T18H455W23S
Rev. 0, 09/2017
NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 1805 to 1880 MHz.
A3T18H455W23SR6
1805–1880 MHz, 87 W AVG., 30 V
AIRFAST RF POWER LDMOS
TRANSISTOR
1800 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
DD = 29.5 Vdc, IDQA = 590 mA, VGSB = 0.78 Vdc, Pout = 87 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
V
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1805 MHz
1840 MHz
1880 MHz
(dB)
17.2
17.4
17.1
(%)
53.5
54.1
53.7
8.0
8.1
7.9
–28.3
–29.4
–31.2
Features
ACP--1230S--4L2S
Advanced high performance in--package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate--source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating
conditions
(2)
6
5
VBW
A
Carrier
Designed for digital predistortion error correction systems
RF /V
1
2
RF /V
outA DSA
inA GSA
(1)
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
(2)
VBW
B
(Top View)
Figure 1. Pin Connections
1. Pin connections 4 and 5 are DC coupled
and RF independent.
2. Device can operate with
V
current
DD
supplied through pin 3 and pin 6.
2017 NXP B.V.
A3T18H455W23SR6
RF Device Data
NXP Semiconductors
1